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参数资料
| 型号： | 2SC4660D |
| 元件分类： | 功率晶体管 |
| 英文描述： | Si, NPN, RF POWER TRANSISTOR |
| 封装： | TO-126ML, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 130K |
| 代理商： | 2SC4660D |
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
High-Definition CRT Display
Video Output Driver Applications
Ordering number:EN4692
2SC4660
12099HA (KT)/90794MT (KOTO) BX-0553 No.4692–1/3
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2042B
[2SC4660]
Features
High fT (fT=2.2GHz typ)
Large current (IC=300mA)
Adoption of FBET process.
C
Electrical Characteristics at Ta = 25C
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
* : The 2SC4660 is classified by 50mA hFE as follows :
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0.75
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相关PDF资料 |
PDF描述 |
|---|---|
| 2SC4660 | Si, NPN, RF POWER TRANSISTOR |
| 2SC4666-A | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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| 2SC4663-4000 | 功能描述:两极晶体管 - BJT VCEO=200 IC=5 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC4664-4000 | 功能描述:两极晶体管 - BJT VCEO=200 IC=8 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC4664-7000 | 功能描述:两极晶体管 - BJT VCEO=200 IC=8 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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