参数资料
型号: 2SC4672
厂商: MICRO COMMERCIAL COMPONENTS
元件分类: 小信号晶体管
英文描述: 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: ULTRA SMALL, PLASTIC PACKAGE-3
文件页数: 1/2页
文件大小: 72K
代理商: 2SC4672
2SC4672
NPN
Plastic-Encapsulate
Transistors
Features
Ideally Suited For Automatic Instertion
Untral Small Surface Mount Package
Pb Free Package are Vailable
SOT-89
B
A
E
D
G
H
F
K
J
C
12
3
1. Base
2. Collector
3. Emitter
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
Revision:
2
200
7/03/01
TM
Micro Commercial Components
Case Material: Molded Plastic.
UL Flammability
Classification Rating 94V-0
www.mccsemi.com
1 of 2
Maximum Ratings @ Ta = 25
(unless otherwise noted)
Symbol
Parameter
Value
Unit
IC
Collector Current
2
A
PD
Total Device Dissipation
0.5
W
TJ
Junction Temperature
150
TSTG
Storage Temperature Range
-55 to +150
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=1mAdc,IB=0)
50
V
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=50uAdc,IE=0)
60
V
V(BR)EBO
Collector-Base Breakdown Voltage
(IE=50uAdc,IC=0)
6V
ICBO
Collector-Base Cutoff Current
(VCB=60Vdc, IE=0)
0.1
Adc
IEBO
Emitter-Base Cutoff Current
(VEB=5Vdc, IC=0)
0.1
uAdc
ON CHARACTERISTICS
hFE
DC Current Gain
(IC=0.5Adc, VCE=2Vdc)
82
270
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=1Adc, IB=50mAdc)
0.35
Vdc
fT
Transition Frequency
(VCE=2Vdc,IC=500mAdc,f=100MHZ)
210(typ)
MHZ
Cob
Collector Output Capacitance
(VCB=10Vdc,IE=0,f=1MHZ)
25(typ)
PF
CLASSIFICATION OF
hFE
Rank
P
Q
Range
82-180
120-270
Marking
DKP
DKQ
2SC4672-P
2SC4672-Q
相关PDF资料
PDF描述
2SC4684(2-7J1A) 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC4688 6 A, 80 V, NPN, Si, POWER TRANSISTOR
2SC4688-O 6 A, 80 V, NPN, Si, POWER TRANSISTOR
2SC4689-O 8 A, 120 V, NPN, Si, POWER TRANSISTOR
2SC4690-O 10 A, 140 V, NPN, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
2SC4672T100P 功能描述:两极晶体管 - BJT NPN 50V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC4672T100Q 功能描述:两极晶体管 - BJT NPN 50V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC4672T200Q 制造商:ROHM Semiconductor 功能描述:
2SC4682 制造商:Toshiba America Electronic Components 功能描述:3000 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SC4682,T6CSF(J 功能描述:TRANS NPN 3A 15V TO226-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:NPN 电流 - 集电极(Ic)(最大值):3A 电压 - 集射极击穿(最大值):15V 不同?Ib,Ic 时的?Vce 饱和值(最大值):500mV @ 30mA,3A 电流 - 集电极截止(最大值):1μA(ICBO) 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):800 @ 500mA,1V 功率 - 最大值:900mW 频率 - 跃迁:150MHz 工作温度:150°C(TJ) 安装类型:通孔 封装/外壳:TO-226-3,TO-92-3 长体 供应商器件封装:TO-92MOD 标准包装:1