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参数资料
| 型号： | 2SC4793-BP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 230 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | TO-220F, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 720K |
| 代理商： | 2SC4793-BP |
2SC4793
NPN Silicon
Transistors
Features
High Voltage: V(BR)CEO=230V
High Transition Frequency: fT=100MHz(Typ.)
Complementary to 2SA1837
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
230
V
VCBO
Collector-Base
Voltage
230
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current
1.0
A
IB
Base Current
0.1
A
PC
Collector power dissipation
Ta=25
OC
Tc=25
OC
2.0
20
W
TJ
Junction Temperature
150
OC
TSTG
Storage Temperature
-55 to +150
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
OFF CHARACTERISTICS
VBR(CEO)
Collector-Emitter Breakdown
Voltage
(IC=10mAdc, IB=0)
230
---
Vdc
ICBO
Collector Cutoff Current
(VCB=230Vdc,IE=0)
---
1.0
uAdc
IEBO
Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
---
1.0
uAdc
ON CHARACTERISTICS
hFE
Forward Current Transfer ratio
(IC=100mAdc, VCE=5.0Vdc)
100
---
320
---
VCE(sat)
Collector Saturation Voltage
(IC=500mAdc, IB=50mAdc)
---
1.5
Vdc
fT
Transition Frequency
(VCE=10Vdc, IC=100mAdc)
---
100
---
MHz
Cob
Collector Output Capacitance
(VCB=10Vdc, IE=0, f=1.0MHz)
---
20
---
pF
VBE(sat)
Base-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
---
2.0
Vdc
omponents
20736 Marilla Street Chatsworth
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MCC
www.mccsemi.com
Revision: 2
2003/07/24
A
N
M
P
Q H
J
B
D
C
E
F
K
G
TO-220F
1 2 3
PIN 1.
BASE
PIN 2.
COLLECTOR
PIN 3.
EMITTER
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.382
.406
9.70
10.30
B
.118
.134
3.00
3.40
Φ
C
.118
3.00
D
.579
.602
14.70
15.30
E
.512
---
13.00
---
F
---
.220
---
5.60
G
.090
.110
2.29
2.79
H
.024
.035
0.60
0.90
J
.043
1.10
K
.154
3.90
M
.169
.185
4.30
4.70
N
.098
.114
2.50
2.90
P
.102
2.60
Q
.024
.035
0.60
0.90
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4793M | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 230V 1A 3-Pin(3+Tab) TO-220NIS |
| 2SC480 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3960V .6A .8W EBC |
| 2SC48050QL | 功能描述:TRANS NPN 10VCEO 65MA SMINI-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SC4807ERTR-E | 制造商:Renesas Electronics 功能描述:NPN 制造商:Renesas Electronics 功能描述:NPN Cut Tape |
| 2SC4808 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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