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参数资料
| 型号： | 2SC4809Q |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | SSMINI3-G1, SC-75, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 199K |
| 代理商： | 2SC4809Q |
Transistors
1
Publication date: February 2003
SJC00171CED
2SC4809
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■ Features
High transition frequency f
T
Small collector output capacitance (Common base, input open cir-
cuited) Cob and reverse transfer capacitance (Common emitter) Crb
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
15
V
Collector-emitter voltage (Base open)
VCEO
10
V
Emitter-base voltage (Collector open)
VEBO
3V
Collector current
IC
50
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55 to +125
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC
= 2 mA, I
B
= 010
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 03
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 10 V, IE = 01
A
Forward current transfer ratio *
1
hFE
VCE
= 4 V, I
C
= 5 mA
75
400
hFE ratio *
2
h
FE
hFE2: VCE = 4 V, IC = 100 A
0.75
1.60
hFE1: VCE = 4 V, IC = 5 mA
Collector-emitter saturation voltage
VCE(sat)
IC
= 20 mA, I
B
= 4 mA
0.5
V
Transition frequency
fT
VCB = 4 V, IE = 5 mA, f = 200 MHz
1.4
1.9
2.7
GHz
Collector output capacitance
Cob
VCB = 4 V, IE = 0, f = 1 MHz
1.4
pF
(Common base, input open circuited)
Reverse transfer capacitance
Crb
VCB = 4 V, IE = 0, f = 1 MHz
0.45
pF
(Common emitter)
Collector-base parameter
rbb' CC
VCB = 4 V, IE = 5 mA, f = 31.9 MHz
11
ps
■ Electrical Characteristics T
a
= 25°C ± 3°C
Rank
P
Q
R
hFE
75 to 130
110 to 220
200 to 400
1.6
±
0.15
1.6±0.1
5
1
1.0±0.1
0.75
±
0.15
0.45
±
0.1
0
to
0.1
(0.5)
(0.3)
(0.5)
0.8
±
0.1
(0.4)
0.15
+0.1
–0.05
0.2
+0.1
–0.05
1
2
3
0.2
±
0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-75
SSMini3-G1 Package
Marking Symbol: 1S
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
*2:
h
FE = hFE2 / hFE1
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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