参数资料
型号: 2SC5011-T2EB
元件分类: 小信号晶体管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: PLASTIC, SUPERMINI-4
文件页数: 1/8页
文件大小: 44K
代理商: 2SC5011-T2EB
1993
DATA SHEET
SILICON TRANSISTOR
Document No. P10399EJ2V0DS00 (2nd edition)
(Previous No. TD-2411)
Date Published July 1995 P
Printed in Japan
2SC5011
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS SUPER MINI MOLD
FEATURES
Small Package
High Gain Bandwidth Product
(fT = 6.5 GHz TYP.)
Low Noise, High Gain
Low Voltage Operation
ORDERING INFORMATION
PART
QUANTITY
PACKING STYLE
NUMBER
2SC5011-T1
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) face to
perforation side of the tape.
2SC5011-T2
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face
to perforation side of the tape.
*
Please contact with responsible NEC person, if you require
evaluation sample. It is available for 50 pcs. one unit sample lot.
(Part No.: 2SC5011)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3V
Collector Current
IC
100
mA
Total Power Dissipation
PT
150
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
–65 to +150
C
PACKAGE DIMENSIONS
in millimeters
Caution; Electrostatic Sensitive Device.
2.1 ± 0.2
1.25 ± 0.1
0.3
(LEADS 2, 3, 4)
(1.3)
0.65
0.60
(1.25)
2.0
±
0.2
1
4
+0.1
–0.05
0.4
+0.1
–0.05
0.3
+0.1 –0.05
XYZ
0 to 0.1
0.3
0.9
±
0.1
0.15
+0.1
–0.05
0.3
+0.1 –0.05
2
3
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
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