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参数资料
| 型号： | 2SC5011-T2EB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SUPERMINI-4 |
| 文件页数： | 3/8页 |
| 文件大小： | 44K |
| 代理商： | 2SC5011-T2EB |
2SC5011
3
TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
-
Total
Power
Dissipation
-
mW
TA - Ambient Temperature - C
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
IC
-
Collector
Current
-
mA
50
VBE - Base to Emitter Voltage - V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
IC
-
Collector
Current
-
mA
30
VCE - Collector to Emitter Voltage - V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
h
FE
-
DC
Current
Gain
IC - Collector Current - mA
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
fT
-
Gain
Bandwidth
Product
-
GHz
IC - Collector Current - mA
INSERTION GAIN vs.
COLLECTOR CURRENT
|S
21e
|2
-
Insertion
Gain
-
dB
1
IC - Collector Current - mA
200
100
50
100
150
0
0.5
1.0
0
40
30
20
10
VCE = 10 V
20
10
5
10
15
0
500
200
1
100
10
20
50
5
10
50
100
VCE = 10 V
10
1
0
5
10
50
100
VCE = 10 V
f = 1 GHz
20
0
10
5
10
50
100
VCE = 10 V
f = 1 GHz
A
180
A
160
A
140
A
120
A
100
A
80
A
40
A
20
A
IB =
200
60
A
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| 2SC5111-Y | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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| 2SC5111 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5178R-T2FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5012 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC5012(NE68118) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Discrete |
| 2SC5012-A | 功能描述:RF TRANSISTOR NPN SOT-343 制造商:cel 系列:- 包装:剪带 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿（最大值）:10V 频率 - 跃迁:9GHz 噪声系数（dB，不同 f 时的典型值）:1.2dB @ 1GHz 增益:15dB 功率 - 最大值:150mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:50 @ 20mA，8V 电流 - 集电极（Ic）（最大值）:65mA 安装类型:表面贴装 封装/外壳:SC-82A，SOT-343 供应商器件封装:- 标准包装:1 |
| 2SC5012-FB(T1) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5012-T1 | 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
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