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参数资料
| 型号： | 2SC5011-T2EB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SUPERMINI-4 |
| 文件页数： | 2/8页 |
| 文件大小： | 44K |
| 代理商： | 2SC5011-T2EB |
2SC5011
2
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITION
Collector Cutoff Current
ICBO
1.0
AVCB = 10 V, IE = 0
Emitter Cutoff Current
IEBO
1.0
AVEB = 1 V, IC = 0
DC Current Gain
hFE
50
120
250
VCE = 10 V, IC = 20 mA*1
Gain Bandwidth Product
fT
6.5
GHz
VCE = 10 V, IC = 20 mA
Feed-back Capacitance
Cre
0.5
0.9
pF
VCB = 10 V, IE = 0, f = 1 MHz*2
Insertion Power Gain
|S21e|2
11
13
dB
VCE = 10 V, IC = 20 mA,f = 1.0 GHz
Noise Figure
NF
1.1
2.0
dB
VCE = 10 V, IC = 7 mA,f = 1.0 GHz
*1 Pulse Measurement; PW
≤ 350
s, Duty Cycle ≤ 2 % Pulsed.
*2 Measured with 3 terminals bridge, Emitter and Case should be grounded.
hFE Classification
Rank
EB
FB
GB
Marking
R26
R27
R28
hFE
50 to 100
80 to 160
125 to 250
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5012 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC5012(NE68118) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Discrete |
| 2SC5012-A | 功能描述:RF TRANSISTOR NPN SOT-343 制造商:cel 系列:- 包装:剪带 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿（最大值）:10V 频率 - 跃迁:9GHz 噪声系数（dB，不同 f 时的典型值）:1.2dB @ 1GHz 增益:15dB 功率 - 最大值:150mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:50 @ 20mA，8V 电流 - 集电极（Ic）（最大值）:65mA 安装类型:表面贴装 封装/外壳:SC-82A，SOT-343 供应商器件封装:- 标准包装:1 |
| 2SC5012-FB(T1) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5012-T1 | 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
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