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参数资料
| 型号： | 2SC4811-M |
| 元件分类： | 功率晶体管 |
| 英文描述： | 8 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 4/8页 |
| 文件大小： | 248K |
| 代理商： | 2SC4811-M |
Data Sheet D15602EJ2V0DS
2
2SC4811
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB = 100 V, IE = 0
1.0
A
Emitter cutoff current
IEBO
VEB = 5 V, IC = 0
5.0
mA
DC current gain
hFE1*VCE = 2.0 V, IC = 4.0 A
2,000
20,000
DC current gain
hFE2*VCE = 2.0 V, IC = 8.0 A
500
Collector saturation voltage
VCE(sat)*IC = 4.0 A, IB = 4.0 mA
1.5
V
Base saturation voltage
VBE(sat)*IC = 4.0 A, IB = 4.0 mA
2.0
V
Turn-on time
ton
0.5
s
Storage time
tstg
2.5
s
Fall time
tf
IC = 4.0 A, IB1 =
IB2 = 4.0 mA
RL = 12.5
, VCC 50 V
Refer to the test circuit.
0.6
s
Collector capacitance
Cob
VCB = 10 V, IE = 0 , f = 1 MHz
45
pF
* Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE1
2,000 to 5,000
4,000 to 10,000
8,000 to 20,000
PACKAGE DRAWING (UNIT: mm)
TAPING SPECIFICATION
Electrode Connection
1. Base
2. Collector
3. Emitter
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC4811-K | 8 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SC4813 | 7.5 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SC4813-AZ | 7.5 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 2SC4815-K-AZ | 5 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SC4815-K | 5 A, 60 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4815-T-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT NPN 60V 5A 3-Pin MP-10 T/R |
| 2SC4815-T-AZ(L) | 制造商:Renesas Electronics 功能描述:NPN |
| 2SC4815-T-AZ-K | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC4820 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANKEN TRANSISTOR FM20 900V 6A 30W BCE |
| 2SC4833-4000 | 功能描述:两极晶体管 - BJT VCEO=400 IC=5 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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