- 您现在的位置：买卖IC网 > PDF目录33408 > 2SC4922-TL 100 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SC4922-TL |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ULTRA SMALL, SMCP, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 26K |
| 代理商： | 2SC4922-TL |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
Muting Circuit, Driver Applications
Ordering number:ENN4768
2SC4922
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21505TN (PC)/12599HA (KT)/53094TH (KOTO) AX8876 No.4768–1/3
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2106A
[2SC4922]
Features
High DC current gain.
On-chip bias resistance (R1=47k
, R2=47k).
Ultrasmall package permitting applied sets to be
small and slim.
Small ON-resistance.
C
Electrical Characteristics at Ta = 25C
1 : Base
2 : Emitter
3 : Collector
SANYO : SMCP
* Characteristic of the constituent transistor.
Continued on next page.
Marking : GA
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
Cs
g
n
i
t
a
Rt
i
n
U
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
o
t
c
e
ll
o
CV
O
B
C
5
2V
e
g
a
t
l
o
V
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
O
E
C
0
2V
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
e
t
i
m
EV
O
B
E
0
1V
e
g
a
t
l
o
V
t
u
p
n
IV N
I
8
1V
t
n
e
r
u
C
r
o
t
c
e
ll
o
CIC
0
1A
m
)
e
s
l
u
P
(
t
n
e
r
u
C
r
o
t
c
e
ll
o
CI P
C
0
2A
m
t
n
e
r
u
C
e
s
a
BIB
0
2A
m
n
o
i
t
a
p
i
s
i
D
r
o
t
c
e
ll
o
CPC
0
5
1W
m
e
r
u
t
a
r
e
p
m
e
T
n
o
i
t
c
n
u
Jj
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
0
5
1
+
o
t
5
–
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
t
n
e
r
u
C
f
o
t
u
C
r
o
t
c
e
ll
o
C
I
O
B
C
V B
C
I
,
V
0
2
=
E 0
=1
.
0A
I
O
E
C
V E
C
I
,
V
5
1
=
B 0
=5
.
0A
t
n
e
r
u
C
f
o
t
u
C
r
e
t
i
m
EI
O
B
E
V B
E
I
,
V
5
=
C 0
=0
33
50
8A
n
i
a
G
t
n
e
r
u
C
Dh E
F
V E
C
I
,
V
2
=
C
A
m
5
=0
0
2
t
c
u
d
o
r
P
h
t
d
i
w
d
n
a
B
-
n
i
a
GfT*V E
C
I
,
V
5
=
C
A
m
0
1
=0
4
2z
H
M
e
c
n
a
t
i
c
a
p
a
C
t
u
p
t
u
O*
b
o
CV B
C
z
H
M
1
=
f
,
V
0
1
=4
.
1F
p
0.8
0.4
2
3
1.6
0.2
1.6
0.3
0.5
1
0.5
0.75
0.6
0 to 0.1
0.1
0.1max
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC4924 | 10 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-3PML |
| 2SC4926YD-TL-E | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4926YD-TL-E | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4926 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4934E | 0.2 A, 120 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4935-O(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC4935-Y,Q(J | 功能描述:TRANS NPN 3A 50V TO220-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:NPN 电流 - 集电极（Ic）（最大值）:3A 电压 - 集射极击穿（最大值）:50V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:600mV @ 200mA，2A 电流 - 集电极截止（最大值）:1μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:70 @ 500mA，2V 功率 - 最大值:2W 频率 - 跃迁:80MHz 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商器件封装:TO-220NIS 标准包装:1 |
| 2SC494 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 50V 5A 50W BEC |
| 2SC4940-7000 | 功能描述:两极晶体管 - BJT VCEO=550 IC=4 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC4940-7012 | 功能描述:两极晶体管 - BJT VCEO=550 IC=4 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。