参数资料
型号: 2SC4935
元件分类: 功率晶体管
英文描述: 3 A, 50 V, NPN, Si, POWER TRANSISTOR
封装: LEAD FREE, 2-10R1A, SC-67, 3 PIN
文件页数: 2/4页
文件大小: 124K
代理商: 2SC4935
2SC4935
2006-11-10
2
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
1.0
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
1.0
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
50
V
hFE (1)
(Note)
VCE = 2 V, IC = 0.5 A
70
240
DC current gain
hFE (2)
VCE = 2 V, IC = 2.5 A
30
Collector-emitter saturation voltage
VCE (sat)
IC = 2 A, IB = 0.2 A
0.4
0.6
V
Base-emitter voltage
VBE
VCE = 2 V, IC = 0.5 A
0.75
1.0
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
80
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
30
pF
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
C4935
Characteristics
indicator
Part No. (or abbreviation code)
相关PDF资料
PDF描述
2SC4935-O 3 A, 50 V, NPN, Si, POWER TRANSISTOR
2SC4935-Y 3 A, 50 V, NPN, Si, POWER TRANSISTOR
2SC4956 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC4956-T2T82 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC4964YV-UR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SC4935-O(Q) 制造商:Toshiba America Electronic Components 功能描述:
2SC4935-Y,Q(J 功能描述:TRANS NPN 3A 50V TO220-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:NPN 电流 - 集电极(Ic)(最大值):3A 电压 - 集射极击穿(最大值):50V 不同?Ib,Ic 时的?Vce 饱和值(最大值):600mV @ 200mA,2A 电流 - 集电极截止(最大值):1μA(ICBO) 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):70 @ 500mA,2V 功率 - 最大值:2W 频率 - 跃迁:80MHz 工作温度:150°C(TJ) 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商器件封装:TO-220NIS 标准包装:1
2SC494 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 50V 5A 50W BEC
2SC4940-7000 功能描述:两极晶体管 - BJT VCEO=550 IC=4 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC4940-7012 功能描述:两极晶体管 - BJT VCEO=550 IC=4 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2