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参数资料
| 型号： | 2SC4956-T2T82 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | MINIMOLD PACKAGE-4 |
| 文件页数： | 1/6页 |
| 文件大小： | 42K |
| 代理商： | 2SC4956-T2T82 |
The information in this document is subject to change without notice.
SILICON TRANSISTOR
2SC4956
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
FEATURES
Low Noise, High Gain
Low Voltage Operation
Low Feedback Capacitance
Cre = 0.20 pF TYP.
ORDERING INFORMATION
PART
QUANTITY
PACKING STYLE
NUMBER
2SC4956-T1
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) face to perforation
side of the tape.
2SC4956-T2
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face to perfora-
tion side of the tape.
*
Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4956)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
9V
Collector to Emitter Voltage
VCEO
6V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
10
mA
Total Power Dissipation
PT
60
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
–65 to +150
C
1993
DATA SHEET
2.8 –0.3
+0.2
1.5 –0.1
+0.2
0.4
–0.05
+0.1
0.4
–0.05
+0.1
2.9
±0.2
(1.8)
0.85
0.95
0.6
–0.05
+0.1
0.4
–0.05
+0.1
1.1
–0.1
+0.2
0.8
0
to
0.1
0.16
–0.06
+0.1
2
3
1
4
5
(1.9)
PACKAGE DIMENSIONS
in millimeters
PIN CONNECTIONS
1.
2.
3.
4.
Collector
Emitter
Base
Emitter
Caution; Electrostatic Sensitive Device.
Document No. P10378EJ2V0DS00 (2nd edition)
(Previous No. TD-2407)
Date Published July 1995 P
Printed in Japan
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC4957 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4959-T2T83-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4959-T1T83-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4959-T2T83-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC4959-T83-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC4957-A | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT NPN 6V 0.03A 4-Pin Mini-Mold |
| 2SC4957-T1 | 制造商:NEC Electronics Corporation 功能描述: |
| 2SC4957-T1-A | 功能描述:RF TRANSISTOR NPN SOT-143 制造商:cel 系列:- 包装:带卷（TR） 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿（最大值）:6V 频率 - 跃迁:12GHz 噪声系数（dB，不同 f 时的典型值）:1.5dB @ 2GHz 增益:11dB 功率 - 最大值:180mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:75 @ 10mA，3V 电流 - 集电极（Ic）（最大值）:30mA 安装类型:表面贴装 封装/外壳:TO-253-4，TO-253AA 供应商器件封装:SOT-143 标准包装:3,000 |
| 2SC4959-T1 | 制造商:NEC Electronics Corporation 功能描述: |
| 2SC4960 | 功能描述:TRANS NPN 800VCEO 1A TOP-3F RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
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