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参数资料
| 型号： | 2SC5008-FB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | ULTRA SUPER MINIMOLD PACKAGE-3 |
| 文件页数： | 4/10页 |
| 文件大小： | 51K |
| 代理商： | 2SC5008-FB |
2SC5008
3
TYPICAL CHARACTERISTICS (TA = 25 C)
20
0
10
1.0
0.5
150
0
50
150
100
50
100
200
0.5
10
50
5
25
0
510
20
15
10
5
VCE = 3 V
IB = 160 A
140 A
120 A
100 A
80 A
60 A
40 A
20 A
20
10
2
1
100
20
50
VCE = 3 V
0.5
0
50
5
12
0
0.5
8
6
4
2
20
10
2
1
6
2
4
VCE = 3 V
f = 2 GHZ
50
20
10
5
12
8
10
12
VCE = 3 V
f = 2 GHZ
10
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
–
Total
Power
Dissipation
–
mW
TA – Ambient Temperature – °C
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
IC
–
Collector
Current
–
mA
h
FE
–
DC
Current
Gain
fT
–
Gain
Bandwidth
Product
–
GHz
|S
21
e|
2 –
Insertion
Power
Gain
–
dB
IC
–
Collector
Current
–
mA
VBE – Base to Emitter Voltage – V
IC – Collector Current – mA
VCE – Collector to Emitter Voltage – V
IC – Collector Current – mA
Free Air
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC5010-FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5010-T1 | RF SMALL SIGNAL TRANSISTOR |
| 2SC5010 | RF SMALL SIGNAL TRANSISTOR |
| 2SC5013-T1GB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5013-T1FB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5008-T1 | 制造商:NEC 制造商全称:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
| 2SC5008-T1-A | 制造商:Renesas Electronics Corporation 功能描述:NPN SMALL SIGNAL AMPLIFIER |
| 2SC5008-T1-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5009 | 制造商:NEC 制造商全称:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
| 2SC5009-T1 | 制造商:NEC 制造商全称:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD |
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