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参数资料
| 型号： | 2SC5107 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | 2-2E1A, USM, SC-70, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 336K |
| 代理商： | 2SC5107 |
Data Sheet D13192EJ3V0DS
4
2SK2371, 2372
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - (s)
rth
(t)
-
Transient
Thermal
Resistance
-
(
°C/W)
10
100
1 m
10 m
100 m
1
10
100
1000
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
ID - Drain Current - (A)
yfs
-
Forward
Transfer
Admittance
-
(S)
515
20
VGS - Gate to Source Voltage - (V)
R
DS
(on)
-Drain
to
Source
On-State
Resistance
-
(
Ω
)
GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE
Tch - Channel Temperature - (
°C)
V
GS
(off)
-Gate
to
Source
Cutoff
Voltage
-
V
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
1.5
ID - Drain Current - (A)
R
DS
(on)
-Drain
to
Source
On-State
Resistance
-
(
Ω
)
10
0.1
1.0
0
0.5
1.0
0
1.0
10
1000
100
VDS = 10 V
Pulsed
Tch = –25
°C
25
°C
75
°C
125
°C
10
1.5
1.0
0.5
Pulsed
ID = 25 A
13 A
6 A
1.0
10
1000
100
Pulsed
VGS = 10 V
–50
0
50
100
150
4.0
3.5
3.0
2.5
2.0
1.5
1.0
Tc = 25
°C
Single Pulse
Rth (ch-a) = 41.7
°C/W
Rth (ch-c) = 0.78 C/W
1000
100
10
1.0
0.1
0.01
0.001
μμ
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5107O | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 30MA I(C) | SC-70 |
| 2SC5107Y | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 30MA I(C) | SC-70 |
| 2SC5108 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Planar Type For VCO Application |
| 2SC5108_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Planar Type For VCO Application |
| 2SC5108FT | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Planar Type For VCO Application |
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