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参数资料
| 型号： | 2SC5107 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | 2-2E1A, USM, SC-70, 3 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 336K |
| 代理商： | 2SC5107 |
Data Sheet D13192EJ3V0DS
5
2SK2371, 2372
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Qg - Gate Charge (nC)
V
DS
-
Drain
to
Source
Voltage
-
(V)
Tch - Channel Temperature - (C)
R
DS
(on)
-
Drain
to
Source
On-State
Resistance
-
(A)
REVERSE RECOVERY TIME vs.
REVERSE DRAIN CURRENT
IF - Forward Current - (A)
tW
-
Reverse
Recovery
Time
-
(ns)
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
-
Gate
to
Source
Voltage
-
(V)
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VSD - Source to Drain Voltage - (V)
ISD
-
Diode
Forward
Current
-
(A)
1.5
100
10
1.0
0.1
0.01
1.0
0.5
0
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - (V)
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
1.0
10
100
1000
ID - Drain Current - (A)
td
(on),
t
r,
t
d
(off),
t
f-
Switching
Time
-
(ns)
100
0.1
10
1.0
SWITCHING CHARACTERISTICS
–50
0
50
100
150
1.0
0.5
0
ID = 25 A
13 A
VGS = 10 V
VGS = 0 V
Pulsed
1000
10000
1 000
100
10
1.0
0.1
1.0
10
100
Ciss
Coss
Crss
tr
VDD = 150 V
VGS = 10 V
Rin = 10
Ω
1.0
10
100
600
500
400
300
200
100
0.1
di/dt = 50 A/ s
VGS = 0
020
80
40
120
500
400
300
200
100
20
18
16
14
12
10
8
6
4
2
0
60
100
VGS
VDS
VDD = 400 V
250 V
125 V
tf
td (off)
td (on)
VGS = 0 V
f = 1 MHz
μ
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5107O | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 30MA I(C) | SC-70 |
| 2SC5107Y | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 30MA I(C) | SC-70 |
| 2SC5108 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Planar Type For VCO Application |
| 2SC5108_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Planar Type For VCO Application |
| 2SC5108FT | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Planar Type For VCO Application |
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