参数资料
型号: 2SC5172
元件分类: 功率晶体管
英文描述: 5 A, 400 V, NPN, Si, POWER TRANSISTOR
封装: LEAD FREE, 2-10R1A, SC-67, 3 PIN
文件页数: 1/5页
文件大小: 143K
代理商: 2SC5172
2SC5172
2006-11-10
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC5172
Switching Regulator and High-Voltage Switching
Applications
High-Speed DC-DC Converter Applications
Excellent switching times: tr = 0.5 μs (max),
tf = 0.3 μs (max) at IC = 2 A
High collector breakdown voltage: VCEO = 400 V
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
600
V
Collector-emitter voltage
VCEO
400
V
Emitter-base voltage
VEBO
7
V
DC
IC
5
Collector current
Pulse
ICP
7
A
Base current
IB
2
A
Ta = 25°C
2.0
Collector power
dissipation
Tc = 25°C
PC
25
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
相关PDF资料
PDF描述
2SC5194-T1FB-A L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5194-T2FB-A L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5199 12 A, 160 V, NPN, Si, POWER TRANSISTOR
2SC5206 5 A, 400 V, NPN, Si, POWER TRANSISTOR
2SC5226-4 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
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