参数资料
型号: 2SC5178R-T1
元件分类: 小信号晶体管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: MINIMOLD PACKAGE-4
文件页数: 2/8页
文件大小: 80K
代理商: 2SC5178R-T1
2
2SC5178R
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector cutoff current
ICBO
VCB = 5 V, IE = 0
100
nA
Emitter cutoff current
IEBO
VEB = 1 V, IC = 0
100
nA
DC gain
hFE
VCE = 2 V, IC = 7 mANote 1
70
140
Forward transfer gain (1)
| S21e | 2
VCE = 2 V, IC = 7 mA, f = 2 GHz
9.5
11.5
dB
Forward transfer gain (2)
| S21e | 2
VCE = 1 V, IC = 5 mA, f = 2 GHz
7.5
10.5
dB
Noise figure (1)
NF
VCE = 2 V, IC = 3 mA, f = 2 GHz
1.5
2.0
dB
Noise figure (2)
NF
VCE = 1 V, IC = 3 mA, f = 2 GHz
1.5
2.0
dB
Gain bandwidth product (1)
fr
VCE = 2 V, IC = 7 mA, f = 2 GHz
10.5
13.5
GHz
Gain bandwidth product (2)
fr
VCE = 1 V, IC = 5 mA, f = 2 GHz
8.5
12
GHz
Feedback capacitance
Cre
VCB = 2 V, IE = 0 mA, f = 1 MHzNote 2
0.3
0.5
pF
Notes 1. Measured with pulses: Pulse width
≤ 350
s, duty cycle ≤ 2 %, pulsed
2. Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard
terminal of the bridge.
hFE class
CLASS
FB
Marking
84 T
hFE
70 to 140
CHARACTERISTIC CURVES (TA = 25
°C)
200
100
0
50
100
150
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
50
40
30
20
10
0
0.5
1.0
VCE = 2 V
30 mW
Total
power
dissipation
P
T(mW)
Ambient temperature TA (°C)
COLLECTOR CURRENT vs.
BASE-TO-EMITTER VOLTAGE
Collector
current
I
C
(mW)
Base-to-emitter voltage VBE (V)
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