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参数资料
| 型号： | 2SC5178R-T1 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | MINIMOLD PACKAGE-4 |
| 文件页数： | 3/8页 |
| 文件大小： | 80K |
| 代理商： | 2SC5178R-T1 |
3
2SC5178R
COLLECTOR CURRENT vs.
COLLECTOR-TO-EMITTER VOLTAGE
25
20
15
10
5
0
2.2
200
A
180
A
160
A
140
A
120
A
100
A
80
A
60
A
40
A
I B = 20
A
2.4
2.6
DC GAIN vs.
COLLECTOR CURRENT
500
200
100
50
20
10
2
5
10
20
50
100
1
VCE = 2 V
VCE = 1 V
2 V
VCE = 1 V
f = 2 GHz
18
16
14
12
10
8
6
4
12
5
10
14
12
10
8
6
4
12
5
10
2 V
VCE = 1 V
f = 2 GHz
4
3
2
1
0
2
5
10
20
100
1
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
FORWARD TRANSFER GAIN vs.
COLLECTOR CURRENT
NOISE FIGURE vs.
COLLECTOR CURRENT
VCE = 1 V
VCE = 2 V
f = 2 GHz
0.5
0.4
0.2
0.1
0
1.0
2.0
3.0
4.0
5.0
FEEDBACK CAPACITANCE vs.
COLLECTOR-TO-BASE VOLTAGE
0.3
f = 2 GHz
Collector
current
I
C
(mA)
Collector-to-emitter voltage VCE (V)
DC
gain
h
FE
Collector current IC (mA)
Gain
bandwidth
product
f
T(GHz)
Collector current IC (mA)
Forward
transfer
gain
|
S
21e
|
2 (dB)
Collector current IC (mA)
Noise
figure
NF
(dB)
Collector current IC (mA)
Feedback
capacitance
C
re
(pF)
Collector-to-base voltage VCB (V)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5178T1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 10MA I(C) | SOT-143R |
| 2SC5178-T1 | 制造商:NEC 制造商全称:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5178-T2 | 制造商:NEC 制造商全称:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5179 | 制造商:NEC 制造商全称:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5179T1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SC-70 |
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