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参数资料
| 型号： | 2SC5185-T1FB-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SUPERMINI-4 |
| 文件页数： | 1/10页 |
| 文件大小： | 50K |
| 代理商： | 2SC5185-T1FB-A |
1994
DATA SHEET
SILICON TRANSISTOR
2SC5185
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
Low Noise
NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
Super Mini-Mold package
ORDERING INFORMATION
PART
QUANTITY
ARRANGEMENT
NUMBER
2SC5185-T1
Embossed tape, 8 mm wide,
pins No. 3 (base), and No. 4
(emitter) facing the perforations
2SC5185-T2
3 000 units/reel
Embossed tape, 8 mm wide,
pins No. 1 (collector) and No. 2
(emitter) facing the perforations
* Contact your NEC sales representative to order samples for
evaluation.
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to Base Voltage
VCBO
5V
Collector to Emitter Voltage
VCEO
3V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
30
mA
Total Power Dissipation
PT
90
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
2.1± 0.2
1.25 ± 0.1
2.0
±
0.2
(1.25)
0.60
0.65
(1.3)
0.9
±
0.1
0.3
0
to
0.1
0.15
+0.1
–0.05
0.4
+0.1
–0.05
0.3
+0.1
–0.05
0.3
+0.1
–0.05
0.3
+0.1
–0.05
12
43
PIN CONNECTIONS
T86
1. Collector
2. Emitter
3. Base
4. Emitter
Document No. P12109EJ2V0DS00 (2nd edition)
(Previous No. TC-2482)
Date Published November 1996 N
Printed in Japan
PACKAGE DIMENSIONS
(Units: mm)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC5185 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5185 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5185-T1 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5185-FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5186-FB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5185-T2 | 制造商:NEC 制造商全称:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5186 | 制造商:NEC 制造商全称:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5186(NE68719) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Discrete |
| 2SC5186T1 | 制造商:NEC 功能描述:New |
| 2SC5186-T1 | 制造商:NEC 制造商全称:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
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