参数资料
型号: 2SC5185-T1FB-A
元件分类: 小信号晶体管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: PLASTIC, SUPERMINI-4
文件页数: 3/10页
文件大小: 50K
代理商: 2SC5185-T1FB-A
2
2SC5185
ELECTRICAL CHARACTERISTICS (TA = 25 C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
Collector Cutoff Current
ICBO
100
nA
VCB = 5 V, IE = 0
Emitter Cutoff Current
IEBO
100
nA
VEB = 1 V, IC = 0
DC Current Gain
hFE
70
140
VCE = 2 V, IC = 20 mA*1
Insertion Power Gain (1)
|S21e|2
811
dB
VCE = 2 V, IC = 20 mA, f = 2 GHz
Insertion Power Gain (2)
|S21e|2
7.5
9
dB
VCE = 1 V, IC = 10 mA, f = 2 GHz
Noise Figure (1)
NF
1.3
2.0
dB
VCE = 2 V, IC = 3 mA, f = 2 GHz
Noise Figure (2)
NF
1.3
2.0
dB
VCE = 1 V, IC = 3 mA, f = 2 GHz
Gain Bandwidth Product (1)
fT
10
13
GHz
VCE = 2 V, IC = 20 mA, f = 2 GHz
Gain Bandwidth Product (2)
fT
811
GHz
VCE = 1 V, IC = 10 mA, f = 2 GHz
Feed-Back Capacitance
Cre
0.3
0.6
pF
VCB = 2 V, IE = 0, f = 1 MHz*2
*1
Measured with pulses: Pulse width
≤ 350
s, duty cycle ≤ 2 %, pulsed.
*2
Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal
of the bridge.
hFE Class
Class
FB
Marking
T86
hFE
70 to 140
相关PDF资料
PDF描述
2SC5185 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5185 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5185-T1 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
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