参数资料
型号: 2SC5191-T2FB-A
元件分类: 小信号晶体管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: SC-59, 3 PIN
文件页数: 6/12页
文件大小: 57K
代理商: 2SC5191-T2FB-A
3
2SC5191
TYPICAL CHARACTERISTICS (TA = 25
°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Ambient Temperature TA (
°C)
Free Air
50
100
150
0
100
200
Total
Power
Dissipation
P
T
(mW)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Base to Emitter Voltage VBE (V)
VCE = 1 V
0.5
1.0
0
0.01
0.02
0.05
0.1
0.2
0.5
100
20
10
5
2
1
Collector
Current
I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector to Emitter Voltage VCE (V)
200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
IB = 20 A
12
34
5
6
0
30
20
10
Collector
Current
I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Collector Current IC (mA)
VCE = 1 V
1
2
5 10
20
50 100
0.1 0.2
0.5
0
100
200
DC
Current
Gain
h
FE
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Collector Current IC (mA)
f = 2 GHz
12
20
5
50
100
10
0
10
8
6
4
2
Gain
Bandwidth
Product
f
T
(GHz)
INSERTION GAIN vs.
COLLECTOR CURRENT
Collector Current IC (mA)
f = 2 GHz
1
2
5
10
20
50
100
0
4
2
8
6
Insertion
Power
Gain
|S
21e
|2
(dB)
VCE = 3 V
VCE = 1 V
VCE = 3 V
VCE = 1 V
相关PDF资料
PDF描述
2SC5191-T2FB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5193-T1FB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5193-T1FB-A L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5193-T2FB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5193-T2FB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SC5192 制造商:NEC 制造商全称:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
2SC5192(NE68839) 制造商:未知厂家 制造商全称:未知厂家 功能描述:Discrete
2SC5192-T1 制造商:NEC 制造商全称:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
2SC5192-T2 制造商:NEC 制造商全称:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
2SC5193 制造商:NEC 制造商全称:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD