- 您现在的位置：买卖IC网 > PDF目录41503 > 2SC5193-T2FB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SC5193-T2FB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | MINIMOLD PACKAGE-3 |
| 文件页数： | 1/12页 |
| 文件大小： | 55K |
| 代理商： | 2SC5193-T2FB |
DATA SHEET
SILICON TRANSISTOR
2SC5193
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
COMPACT MINI MOLD
DATA SHEET
Document No. P10396EJ2V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan
1994
FEATURES
Low Voltage Operation, Low Phase Distortion
Low Noise
NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz
NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
Large Absolute Maximum Collector Current
IC = 100 mA
Compact Mini Mold Package
EIAJ: SC-70
ORDERING INFORMATION
PART
NUMBER
QUANTITY
PACKING STYLE
2SC5193-T1
3 Kpcs/Reel
Embossed tape 8 mm wide.
Pin 3 (collector) face to perforation side of the tape.
2SC5193-T2
3 Kpcs/Reel
Embossed tape 8 mm wide.
Pin 1 (Emitter), Pin 2 (Base) face to perforation side
of the tape.
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
VCBO
9V
Collector to Emitter Voltage
VCEO
6V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
100
mA
Total Power Dissipation
PT
150
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150
C
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
PACKAGE DRAWING
(Units: mm)
1.25±0.1
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.1±0.1
2.0±0.2
0.9±0.1
0
to
0.1
0.65
0.3
0.65
0.3
+0.1
0
0.3
+0.1
0
0.15
+0.1
0.05
T88
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC5193-T2FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5193-FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5200-R | 15 A, 230 V, NPN, Si, POWER TRANSISTOR |
| 2SC5200-O | 15 A, 230 V, NPN, Si, POWER TRANSISTOR |
| 2SC5242-O | 15 A, 230 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5194 | 制造商:NEC 制造商全称:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
| 2SC5194(NE68818) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Discrete |
| 2SC5194F-T2 | 制造商:NEC 制造商全称:NEC 功能描述:TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 100MA I(C) | SOT-343R |
| 2SC5194-T1 | 制造商:NEC 制造商全称:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
| 2SC5194-T2 | 制造商:NEC 制造商全称:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。