参数资料
型号: 2SC5200
元件分类: 功率晶体管
英文描述: 15 A, 230 V, NPN, Si, POWER TRANSISTOR
封装: LEAD FREE, 2-21F1A, 3 PIN
文件页数: 1/4页
文件大小: 135K
代理商: 2SC5200
2SC5200
2006-11-10
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5200
Power Amplifier Applications
High breakdown voltage: VCEO = 230 V (min)
Complementary to 2SA1943
Suitable for use in 100-W high fidelity audio amplifier’s output stage
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
230
V
Collector-emitter voltage
VCEO
230
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
15
A
Base current
IB
1.5
A
Collector power dissipation
(Tc = 25°C)
PC
150
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
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相关代理商/技术参数
参数描述
2SC5200_04 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Power Amplifier Applications
2SC5200-0 制造商:TT Electronics/ Semelab 功能描述:TRANSISTOR NPN 2-21F1A 制造商:MAGNATEC 功能描述:TRANSISTOR, NPN, 2-21F1A 制造商:TT Electronics / Semelab 功能描述:BIPOLAR TRANSISTOR, NPN, 230V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:230V; Transition Frequency Typ ft:30MHz; Power Dissipation Pd:150W; DC Collector Current:15A; DC Current Gain hFE:60; No. of Pins:3 ;RoHS Compliant: Yes
2SC5200-0 制造商:TT Electronics/ Semelab 功能描述:TRANSISTOR NPN 2-21F1A
2SC52000TU 制造商:Fairchild Semiconductor Corporation 功能描述:
2SC5200N(S1,E,S) 功能描述:TRANS NPN 230V 15A TO-3PL 制造商:toshiba semiconductor and storage 系列:- 包装:管件 零件状态:有效 晶体管类型:NPN 电流 - 集电极(Ic)(最大值):15A 电压 - 集射极击穿(最大值):230V 不同?Ib,Ic 时的?Vce 饱和值(最大值):3V @ 800mA,8A 电流 - 集电极截止(最大值):5μA(ICBO) 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):80 @ 1A,5V 功率 - 最大值:150W 频率 - 跃迁:30MHz 安装类型:通孔 封装/外壳:TO-3P-3,SC-65-3 供应商器件封装:TO-3P(N) 标准包装:150