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参数资料
| 型号： | 2SC5279 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-10T1A, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 94K |
| 代理商： | 2SC5279 |
2SC5279
2004-07-26
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5279
Switching Regulator Applications
High-Voltage Switching Applications
DC-DC Converter Applications
Excellent switching times: tr = 1.0 s (max)
tf = 1.0 s (max) (IC = 0.8 A)
High breakdown voltage: VCEO = 400 V
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
600
V
Collector-emitter voltage
VCEO
400
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
2
A
Base current
IB
0.5
A
Collector power dissipation
PC
1.8
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 500 V, IE = 0
―
100
A
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
―
1
mA
Collector-base breakdown voltage
V (BR) CBO
IC = 1 mA, IE = 0
600
―
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
400
―
V
VCE = 5 V, IC = 0.1 A
20
―
DC current gain
hFE
VCE = 5 V, IC = 1 A
8
―
Collector-emitter saturation voltage
VCE (sat)
IC = 1 A, IB = 0.2 A
―
1.0
V
Base-emitter saturation voltage
VBE (sat)
IC = 1 A, IB = 0.2 A
―
1.5
V
Rise time
tr
―
1.0
Storage time
tstg
―
2.5
Switching time
Fall time
tf
IB1 = IB2 = 0.08 A, duty cycle ≤ 1%
―
1.0
s
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10T1A
Weight: 1.5 g (typ.)
I B1
20 s
VCC ≈ 200 V
Output
250
IB1
IB2
Input
I B2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5279(TP,Q) | 制造商:Toshiba 功能描述:NPN Tape & Reel |
| 2SC5280 | 制造商:SAVANTIC 制造商全称:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| 2SC5287 | 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN 550V 5A TO3P |
| 2SC5287_01 | 制造商:SANKEN 制造商全称:Sanken electric 功能描述:Silicon NPN Triple Diffused Planar Transistor |
| 2SC5288 | 制造商:NEC 制造商全称:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
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