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参数资料
| 型号： | 2SC5288-T1KB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC, SC-61, 4 PIN |
| 文件页数： | 5/12页 |
| 文件大小： | 164K |
| 代理商： | 2SC5288-T1KB |
2SC5288
2
Data Sheet PU10039EJ01V0DS
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Collector Cutoff Current
ICBO
VCB = 5 V, IE = 0
2.5
A
Emitter Cutoff Current
IEBO
VEB = 1 V, IC = 0
2.5
A
DC Current Gain
hFE
VCE = 3.6 V, IC = 100 mANote
60
—
Output Power
P–1
VCC = 3.6 V, f = 1.9 GHz,
23
24
dBm
Power Gain
GP
ICq = 1 mA (class AB operation)
7
8
dB
Collector Efficiency
ηC
Duty factor 1/8
50
60
%
Note
Pulse Measurement: PW
≤ 350
s, Duty cycle ≤ 2 %, Pulsed
hFE Classification
Rank
KB
Marking
T89
hFE
more than 60
APPLICATION EXAMPLES
(1) Power amplifier for DECT
+3 dBm
PO = 27 dBm
2SC5289
2SC5288
2SC5192
(2) Power amplifier for PHS
+7 dBm
PL = 23 dBm
2SC5289
2SC5288
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PDF描述 |
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| 2SC5288-T1KB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5289-FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5295GR | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5295GQ | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5295G | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5289 | 制造商:NEC 制造商全称:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER |
| 2SC5289(NE69039) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Discrete |
| 2SC5289T1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 300MA I(C) | SOT-143R |
| 2SC5289-T1-A-KB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5291 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:High-Voltage Switching Applications |
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