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参数资料
| 型号： | 2SC5336-RF-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | POWER, MINIMOLD PACKAGE-4 |
| 文件页数： | 1/8页 |
| 文件大小： | 47K |
| 代理商： | 2SC5336-RF-A |
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P10938EJ2V0DS00 (2nd edition)
Date Published August 2001 NS CP(K)
Printed in Japan
1996, 2001
NPN SILICON RF TRANSISTOR
2SC5336
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
4-PIN POWER MINIMOLD
The mark
shows major revised points.
FEATURES
High gain:
S21e2 = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
4-pin power minimold package with improved gain from the 2SC3357
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5336
25 pcs (Non reel)
Magazine case
2SC5336-T1
1 kpcs/reel
12 mm wide embossed taping
Collector face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
100
mA
Total Power Dissipation
Ptot
Note
1.2
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Mounted on 16 cm
2
× 0.7 mm (t) ceramic substrate (Copper plating)
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC5336-T1RE | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5336-T1-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5336-T1RE-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5336-T1RH-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5336 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5336RF-T1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243 |
| 2SC5336RH | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243 |
| 2SC5336RH-T1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243 |
| 2SC5336-T1 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER |
| 2SC5336-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:RF Transistor, NPN,12V,0.1A,P-MiniMold4 制造商:Renesas 功能描述:0 |
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