参数资料
型号: 2SC5336
元件分类: 小信号晶体管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: POWER, MINIMOLD PACKAGE-4
文件页数: 1/8页
文件大小: 47K
代理商: 2SC5336
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P10938EJ2V0DS00 (2nd edition)
Date Published August 2001 NS CP(K)
Printed in Japan
1996, 2001
NPN SILICON RF TRANSISTOR
2SC5336
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
4-PIN POWER MINIMOLD
The mark
shows major revised points.
FEATURES
High gain:
S21e2 = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
4-pin power minimold package with improved gain from the 2SC3357
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5336
25 pcs (Non reel)
Magazine case
2SC5336-T1
1 kpcs/reel
12 mm wide embossed taping
Collector face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
100
mA
Total Power Dissipation
Ptot
Note
1.2
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Mounted on 16 cm
2
× 0.7 mm (t) ceramic substrate (Copper plating)
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
相关PDF资料
PDF描述
2SC5336-RE UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5336-RH UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5336-RF UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5336-RE-A UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5336-RF-A UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SC5336(NE856M02) 制造商:未知厂家 制造商全称:未知厂家 功能描述:Discrete
2SC5336-AZ 功能描述:RF TRANSISTOR NPN SOT-89 制造商:cel 系列:- 包装:剪带 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿(最大值):12V 频率 - 跃迁:6.5GHz 噪声系数(dB,不同 f 时的典型值):1.8dB @ 1GHz 增益:12dB 功率 - 最大值:1.2W 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):50 @ 20mA,10V 电流 - 集电极(Ic)(最大值):100mA 安装类型:表面贴装 封装/外壳:TO-243AA 供应商器件封装:- 标准包装:1
2SC5336RE 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243
2SC5336RE-T1 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243
2SC5336RF 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 100MA I(C) | TO-243