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参数资料
| 型号： | 2SC5347 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | PCP, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 79K |
| 代理商： | 2SC5347 |
2SC5347
No.5512-1/6
Features
High-frequency medium output amplification
(VCE=5V, IC=50mA)
: fT=4.7GHz typ (f=1GHz).
:
S21e
2=8dB typ (f=1GHz).
: NF=1.8dB typ (f=1GHz).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
20
V
Collector-to-Emitter Voltage
VCEO
12
V
Emitter-to-Base Voltage
VEBO
2V
Collector Current
IC
150
mA
Collector Dissipation
PC
Mounted on a ceramic board (900mm2
0.8mm)
1.3
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=10V, IE=0A
1.0
μA
Emitter Cutoff Current
IEBO
VEB=1V, IC=0A
10
μA
DC Current Gain
hFE
VCE=5V, IC=50mA
60*
270*
Gain-Bandwidth Product
fT
VCE=5V, IC=50mA
3
4.7
GHz
Output Capacitance
Cob
VCB=10V, f=1MHz
1.3
2.0
pF
Reverse Transfer Capacitance
Cre
VCB=10V, f=1MHz
0.9
pF
Forward Transfer Gain
S21e
2
VCE=5V, IC=50mA, f=1GHz
6
8
dB
Noise Figure
NF
VCE=5V, IC=50mA, f=1GHz
1.8
3.0
dB
Marking : CZ
* : The 2SC5347 is classified by 50mA hFE as follows :
Rank
D
E
F
hFE
60 to 120
90 to 180
135 to 270
SANYO Semiconductors
DATA SHEET
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83006 MS IM TC-00000117 /72006AB MS IM TC-00000075 / 21599 TH (KT) / 91296 YK (KOTO) TA-0689
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
2SC5347
NPN Epitaxial Planar Silicon Transistor
High-Frequency Semi-Power Output Stage,
Low-Noise Medium Output Amplifier Applications
Ordering number : EN5512C
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PDF描述 |
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| 2SC5353BL-TF3-T | 3 A, 750 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC5353BG-TF3-T | 3 A, 750 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5347A | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifier Applications |
| 2SC5347AE-TD-E | 功能描述:两极晶体管 - BJT HIGH-FREQUENCY AMPLIFIER RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5347AF-TD-E | 功能描述:两极晶体管 - BJT VHF TO UHF WIDEBAND AMPLIFIER RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC535 | 制造商:Panasonic Industrial Company 功能描述:DISCD TRANSISTOR |
| 2SC5351 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type High-Voltage Switching Applications |
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