参数资料
型号: 2SC5352
元件分类: 功率晶体管
英文描述: 10 A, 400 V, NPN, Si, POWER TRANSISTOR
封装: LEAD FREE, 2-16C1A, 3 PIN
文件页数: 1/4页
文件大小: 126K
代理商: 2SC5352
2SC5352
2004-07-26
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5352
Switching Regulator and High-Voltage Switching
Applications
High-Speed DC-DC Converter Applications
Excellent switching times: tr = 0.5 s (max), tf = 0.3 s (max)
(IC = 4 A)
High breakdown voltage: VCEO = 400 V
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
600
V
Collector-emitter voltage
VCEO
400
V
Emitter-base voltage
VEBO
7
V
DC
IC
10
Collector current
Pulse
ICP
15
A
Base current
IB
5
A
Collector power dissipation
(Tc = 25°C)
PC
80
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 480 V, IE = 0
100
A
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
1
mA
Collector-base breakdown voltage
V (BR) CBO
IC = 1 mA, IE = 0
600
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
400
V
DC current gain
hFE
VCE = 5 V, IC = 1 A
20
Collector-emitter saturation voltage
VCE (sat)
IC = 4 A, IB = 0.5 A
1.0
V
Base-emitter saturation voltage
VBE (sat)
IC = 4 A, IB = 0.5 A
1.3
V
Rise time
tr
0.5
Storage time
tstg
2.0
Switching time
Fall time
tf
IB1 = 0.5 A, IB2 = 1 A, duty cycle ≤ 1%
0.3
s
Unit: mm
JEDEC
JEITA
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.)
I B1
20 s
VCC ≈ 200 V
Output
50
IB2
IB1
Input
I B2
IC
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