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参数资料
| 型号： | 2SC5352 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-16C1A, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 126K |
| 代理商： | 2SC5352 |
2SC5352
2004-07-26
3
Collector-emitter voltage VCE (V)
IC – VCE
Co
lle
ct
or
cu
rr
ent
I
C
(
A
)
hFE – IC
D
C
cu
rre
nt
gai
n
h
FE
Collector current IC (A)
VBE (sat) – IC
Ba
se-
emi
tte
rsa
tu
rati
on
v
oltage
V
BE
(s
a
t)
(V
)
VCE (sat) – IC
Col
lect
or
-e
m
itte
rs
a
tu
ra
tion
volta
g
e
V
CE
(s
a
t)
(
V
)
Collector current IC (A)
Base-emitter voltage VBE (V)
IC – VBE
C
ollect
or
c
urre
nt
I C
(
A
)
Collector-emitter voltage VCE (V)
Safe Operating Area
Coll
ect
or
cur
re
nt
I
C
(A
)
10
6
4
2
0
8
4
6
8
2
0
10
IB = 0.05 A
Common emitter
Tc = 25°C
0.4
1.2
0.6
0.8
0.2
0.1
1.0
Common emitter
VCE = 5 V
Tc = 100°C
25
20
16
8
4
0
0.5
1
0
1.5
55
12
30
3
1
10
0.1
100
30
Tc = 100°C
55
25
Common emitter
VCE = 5 V
1
5
10
50
3
5
0.3 0.5
5
0.1
1
0.3
Common emitter
IC/IB = 8
0.1
10
3
Tc = 100°C
55
25
5
1
0.3
3
0.5
10
5
0.1
1
0.3
Common emitter
IC/IB = 8
0.1
10
3
Tc = 100°C
55
25
5
1
0.3
3
0.5
10
0.01
1
3
1000
3
30
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
IC max
(continuous)
IC max (pulsed)*
VCEO max
DC operation
Tc = 25°C
1 ms*
10 ms*
100 ms*
1
0.3
0.1
0.03
10
30
100
300
100 s*
10 s*
10
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5352(F) | 制造商:Toshiba 功能描述:NPN Cut Tape |
| 2SC5352_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type Switching Regulator and High-Voltage Switching Applications |
| 2SC5352-1(F) | 制造商:Toshiba 功能描述:NPN 400V 10A 20 TO3P(N) Bulk |
| 2SC5353 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC5353(Q) | 制造商:Toshiba 功能描述:NPN 800V 3A 10 TO220NIS Bulk 制造商:Toshiba 功能描述:Trans GP BJT NPN 800V 3A 3-Pin(3+Tab) TO-220NIS |
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