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参数资料
| 型号： | 2SC5368 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-8H1A, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 139K |
| 代理商： | 2SC5368 |
2SC5368
2006-11-10
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5368
High-Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
High speed: tr = 0.5 s (max), tf = 0.3 s (max) (IC = 0.8 A)
High breakdown voltage: VCEO = 450 V
High DC current gain: hFE = 20 (min) (IC = 0.2 A)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
650
V
Collector-emitter voltage
VCEO
450
V
Emitter-base voltage
VEBO
7
V
DC
IC
2
Collector current
Pulse
ICP
4
A
Base current
IB
0.5
A
Ta = 25°C
1.5
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5368(Q) | 制造商:Toshiba 功能描述:NPN Bulk |
| 2SC5368_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type |
| 2SC5369 | 制造商:NEC 制造商全称:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION |
| 2SC5369(NE696M01) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Discrete |
| 2SC536D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | TO-92 |
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