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参数资料
| 型号： | 2SC5368 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-8H1A, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 139K |
| 代理商： | 2SC5368 |
LB11824M
No.7107-3/17
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
PWM oscillator (PWM pin)
Output H level voltage
VOH (PWM)
2.75
3.0
3.25
V
Output L level voltage
VOL (PWM)
1.0
1.2
1.3
V
External C charge current
ICHG
VPWM = 2.1V
-60
-45
-30
μA
Oscillator frequency
f (PWM)
C = 1000pF
17.6
22
26.8
kHz
Amplitude
V (PWM)
1.6
1.8
2.1
Vp-p
TOC pin
Input voltage 1
VTOC1
Output duty 0%
2.72
3.0
3.30
V
Input voltage 2
VTOC2
Output duty 100%
0.99
1.2
1.34
V
Input voltage 1L
VTOC1L
Design target value*, 0% with VCC2 = 4.7V
2.72
2.80
2.90
V
Input voltage 2L
VTOC2L
Design target value*, 100% with VCC2 = 4.7V
0.99
1.08
1.17
V
Input voltage 1H
VTOC1H
Design target value*, 0% with VCC2 = 5.3V
3.08
3.20
3.30
V
Input voltage 2H
VTOC2H
Design target value*, 100% with VCC2 = 5.3V
1.11
1.22
1.34
V
HP pin
Output saturation voltage
VHPL
IO = 7mA
0.15
0.5
V
Output leakage current
IHP leak
VO = 13.5V
10
μA
CSD oscillator (CSD pin)
Output H level voltage
VOH (CSD)
3.2
3.6
4.0
V
Output L level voltage
VOL (CSD)
0.9
1.1
1.3
V
External C charge current
ICHG1
-14
-10
-6
μA
External C discharge current
ICHG2
7
11
15
μA
Oscillator frequency
f (CSD)
C = 0.01
μF
200
Hz
Amplitude
V (CSD)
2.2
2.5
2.75
Vp-p
Current limiter circuit (RF pin)
Limiter voltage
VRF
0.45
0.5
0.55
V
Low-voltage protection circuit (LVS pin)
Operating voltage
VSDL
3.6
3.8
4.0
V
Release voltage
VSDH
4.1
4.3
4.5
V
Hysteresis width
ΔVSD
0.35
0.5
0.65
V
Thermal shutdown operation (Overheat protection circuit)
Thermal shutdown operating
temperature
TSD
Design target value* (junction temperature)
125
145
165
°C
Hysteresis width
ΔTSD
Design target value* (junction temperature)
20
25
30
°C
PWMIN pin
Input frequency
f (PI)
50
kHz
H level input voltage
VIH (PI)
2.0
VREG
V
L level input voltage
VIL (PI)
0
1.0
V
Input open voltage
VIO (PI)
VREG-0.5
VREG
V
Hysteresis width
VIS (PI)
0.2
0.3
0.4
V
H level input current
IIH (PI)
VPWMIN = VREG
-10
0
10
μA
Llevel input current
IIL(PI)
VPWMIN = 0V
-130
-96
μA
S/S pin
H level input voltage
VIH (SS)
2.0
VREG
V
L level input voltage
VIL (SS)
0
1.0
V
Input open voltage
VIO (SS)
VREG-0.5
VREG
V
Hysteresis width
VIS (SS)
0.2
0.3
0.4
V
H level input current
IIH (SS)
VS/S = VREG
-10
0
10
μA
L level input current
IIL(SS)
VS/S = 0V
-130
-96
μA
Note : * These items are design target values and are not tested.
Continued on next page.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5368(Q) | 制造商:Toshiba 功能描述:NPN Bulk |
| 2SC5368_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type |
| 2SC5369 | 制造商:NEC 制造商全称:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION |
| 2SC5369(NE696M01) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Discrete |
| 2SC536D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | TO-92 |
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