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参数资料
| 型号： | 2SC5437-T1FB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | ULTRA SUPER MINIMOLD PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 60K |
| 代理商： | 2SC5437-T1FB |
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC5437
NPN EPITAXIAL SILICON TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD
Document No. PU10105EJ01V0DS (1st edition)
(Previous No. P13146EJ1V0DS00)
Date Published February 2002 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Corporation 1998
NEC Compound Semiconductor Devices 2002
FEATURES
Contains same chip as 2SC5195
Flat-lead 3-pin thin-type ultra super minimold package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5437
50 pcs (Non reel)
8 mm wide embossed taping
2SC5437-T1
3 kpcs/reel
Pin 3 (collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
9V
Collector to Emitter Voltage
VCEO
6V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
100
mA
Total Power Dissipation
Ptot
Note
125
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Free air
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC5437-EB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5441 | 15 A, 600 V, NPN, Si, POWER TRANSISTOR |
| 2SC5441A | 15 A, 600 V, NPN, Si, POWER TRANSISTOR |
| 2SC5445 | 20 A, 600 V, NPN, Si, POWER TRANSISTOR |
| 2SC5448 | POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5439(F) | 功能描述:两极晶体管 - BJT NPN 450V 8A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5443 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTOR TO-3 1500V 20A 3.5W |
| 2SC5445 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC5445(F) | 制造商:Toshiba 功能描述:NPN Cut Tape |
| 2SC5446(F) | 制造商:Toshiba America Electronic Components 功能描述: |
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