- 您现在的位置：买卖IC网 > PDF目录33417 > 2SC5509-FB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SC5509-FB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | SUPER MINIMOLD, M04, 4 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 81K |
| 代理商： | 2SC5509-FB |
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC5509
NPN SILICON RF TRANSISTOR
FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
The mark
shows major revised points.
Document No. PU10009EJ02V0DS (2nd edition)
Date Published September 2004 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices, Ltd. 2001, 2004
FEATURES
Ideal for medium output power amplification
NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz
Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz
fT = 25 GHz technology adopted
Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5509
50 pcs (Non reel)
8 mm wide embossed taping
2SC5509-T2
3 kpcs/reel
Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
15
V
Collector to Emitter Voltage
VCEO
3.3
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
100
mA
Total Power Dissipation
Ptot
Note
190
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Free Air
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC5509 | X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5511E | 1.5 A, 160 V, NPN, Si, POWER TRANSISTOR |
| 2SC5541 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5543YA-TR-E | Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5543 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5509-T2-A | 功能描述:RF TRANSISTOR NPN SOT-343F 制造商:cel 系列:- 包装:剪切带（CT） 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿（最大值）:3.3V 频率 - 跃迁:15GHz 噪声系数（dB，不同 f 时的典型值）:1.2dB @ 2GHz 增益:14dB 功率 - 最大值:190mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:50 @ 10mA，2V 电流 - 集电极（Ic）（最大值）:100mA 安装类型:表面贴装 封装/外壳:SOT-343F 供应商器件封装:SOT-343 标准包装:1 |
| 2SC5509-T2-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5517000LK | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC5521 | 制造商:JVC Worldwide 功能描述:TRANSISTOR |
| 2SC5536A-TL-H | 功能描述:两极晶体管 - BJT BIP NPN 50MA 12V FT=1.7G RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。