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参数资料
| 型号： | 2SC5509-FB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | SUPER MINIMOLD, M04, 4 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 81K |
| 代理商： | 2SC5509-FB |
Data Sheet PU10009EJ02V0DS
2
2SC5509
THERMAL RESISTANCE
Parameter
Symbol
Ratings
Unit
Junction to Case Resistance
Rth j-c
95
°C/W
Junction to Ambient Resistance
Rth j-a
650
°C/W
ELECTRICAL CHARACTERISTICS (TA = +25
°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
600
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
600
nA
DC Current Gain
hFE
Note 1
VCE = 2 V, IC = 10 mA
50
70
100
RF Characteristics
Gain Bandwidth Product
fT
VCE = 3 V, IC = 90 mA, f = 2 GHz
13
15
GHz
Insertion Power Gain
S21e2
VCE = 2 V, IC = 50 mA, f = 2 GHz
8
11
dB
Noise Figure
NF
VCE = 2 V, IC = 10 mA, f = 2 GHz,
ZS = Zopt
–
1.2
1.7
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 2 V, IE = 0 mA, f = 1 MHz
0.5
0.75
pF
Maximum Available Power Gain
MAG
Note 3
VCE = 2 V, IC = 50 mA, f = 2 GHz
14
dB
Maximum Stable Power Gain
MSG
Note 4
VCE = 2 V, IC = 50 mA, f = 2 GHz
15
dB
Gain 1 dB Compression Output Power
PO (1 dB)
VCE = 2 V, IC = 70 mA
Note 5, f = 2 GHz
17
dBm
3rd Order Intermodulation Distortion
Output Intercept Point
OIP3
VCE = 2 V, IC = 70 mA
Note 5, f = 2 GHz
27
dBm
Notes 1. Pulse measurement: PW
≤ 350
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MAG =
4. MSG =
5. Collector current when PO (1 dB) is output
hFE CLASSIFICATION
Rank
FB
Marking
T80
hFE Value
50 to 100
(K –
√ (K2 – 1) )
S21
S12
S21
S12
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5509-T2-A | 功能描述:RF TRANSISTOR NPN SOT-343F 制造商:cel 系列:- 包装:剪切带（CT） 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿（最大值）:3.3V 频率 - 跃迁:15GHz 噪声系数（dB，不同 f 时的典型值）:1.2dB @ 2GHz 增益:14dB 功率 - 最大值:190mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:50 @ 10mA，2V 电流 - 集电极（Ic）（最大值）:100mA 安装类型:表面贴装 封装/外壳:SOT-343F 供应商器件封装:SOT-343 标准包装:1 |
| 2SC5509-T2-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5517000LK | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC5521 | 制造商:JVC Worldwide 功能描述:TRANSISTOR |
| 2SC5536A-TL-H | 功能描述:两极晶体管 - BJT BIP NPN 50MA 12V FT=1.7G RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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