参数资料
型号: 2SC5549
元件分类: 小信号晶体管
英文描述: 1000 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装: LEAD FREE, 2-5J1A, TO-92MOD, SC-65, 3 PIN
文件页数: 1/5页
文件大小: 138K
代理商: 2SC5549
2SC5549
2006-11-10
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5549
High-Speed Switching Application for Inverter Lighting
System
Suitable for RCC circuits. (guaranteed small current hFE)
: hFE = 13 (min) (IC = 1 mA)
High speed: tr = 0.5 μs (max), tf = 0.3 μs (max) (IC = 0.24 A)
High breakdown voltage: VCEO = 400 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
400
V
Collector-emitter voltage
VCEO
400
V
Emitter-base voltage
VEBO
7
V
DC
IC
1
Collector current
Pulse
ICP
2
A
Base current
IB
0.5
A
Collector power dissipation
PC
0.9
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
TO-92MOD
JEITA
SC-65
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
相关PDF资料
PDF描述
2SC5551 Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5590 16 A, 800 V, NPN, Si, POWER TRANSISTOR
2SC5606-A L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5606-A-FB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5606-T1FB-A L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
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