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参数资料
| 型号： | 2SC5576 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 70 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TO-220FN, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 49K |
| 代理商： | 2SC5576 |
2SC5576
Transisitors
Medium Power Transistor
(Motor or Relay drive) (60
±10V, 4A)
2SC5576
!Features
1) Built-in zener diode between collector and base.
2) Strong protection against reverse power surges due to
"L" loads.
3) Built-in resistor between base and emitter.
4) Built-in damper diode.
!
!Circuit diagram
R2
R1
C
B
E
R1
4.5k
R2
300
B : Base
C : Collector
E : Emitter
!
!Absolute maximum ratings
(Ta=25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
60±10
6
4
2
150
-55~+150
Unit
V
A(DC)
W
6
*
30
A(Pulse)
W(Tc=25C)
C
* Single pulse, Pw=100ms
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
!
!Packaging specifications and hFE
Type
2SC5576
TO-220FN
2k
20k
-
500
Package
hFE
Code
Basic ordering unit
(pieces)
!
!Electrical characteristics
(Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
50
-
2000
-
60
-
1
-
80
30
70
10
3
1.5
10000
-
V
A
mA
V
*1
*2
MHz
pF
IC=50
A
IC=5mA
VCB=40V
VEB=5V
IC/IB=1.5A/6mA
VCE/IC=5V/1.5A
VCE=5V , IE=-0.2A , f=30MHz
VCB=10V , IE=0A , f=1MHz
ton
-
0.4
-
s
IC=1.5A , RL=14
tstg
-
1.5
-
s
IB1=-IB2=6mA
tf
-
0.4
-
s
VCC
20V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
*1 Measured using pulse current.
*2 Transition frequency of the device.
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相关代理商/技术参数 |
参数描述 |
|---|---|
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| 2SC5588(Q,M) | 功能描述:两极晶体管 - BJT Transistor NPN 1700V 15A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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