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参数资料
| 型号： | 2SC5585TL |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | EMT3, SC-75A, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 68K |
| 代理商： | 2SC5585TL |
2SC5585 / 2SC5663
Transistors
Rev.B
1/2
Low frequency transistor (12V, 0.5A)
2SC5585 / 2SC5663
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
Applications
For switching
For muting
Features
1) High current.
2) Low VCE(sat).
VCE(sat)
≤ 250mV at IC = 200mA / IB = 10mA
External dimensions (Unit : mm)
ROHM : EMT3
EIAJ : SC-75A
JEDEC : SOT-416
2SC5585
Abbreviated symbol : BX
ROHM : VMT3
2SC5663
(1) Base
(2) Emitter
(3) Collector
(1) Emitter
(2) Base
(3) Collector
0.7
0.15
0.1Min.
0.55
0~0.1
0.2
1.6
1.0
0.3
0.8
(2)
0.5
(3)
0.2
(1)
0~0.1
(3)
0.32
0.8
1.2
0.13
0.5
0.22
0.4
1.2
0.8
0.2
0.15Max.
0.2
(2)
(1)
Absolute maximum ratings (Ta=25
°C)
Parameter
Collectot-base voltage
Collector-emitter voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PC
Tj
Tstg
15
V
mA
mW
°C
12
Emitter-base voltage
VEBO
V
6
500
ICP
A
1
150
55 to +150
Symbol
Limits
Unit
Single pulse Pw = 1ms
Electrical characteristics (Ta=25
°C)
Parameter
Collector-base breakdown voltage
Collectoe-emitter brakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
hFE
VCE(sat)
Cob
Min.
15
12
6
270
90
7.5
100
680
250
VIC = 10
A
IC = 1mA
IE = 10
A
VCB = 15V
VCE = 2V, IC = 10mA
IC = 200mA, IB = 10mA
VCB = 10V, IE = 0A, f = 1MHz
V
nA
Emitter cutoff current
IEBO
100
VCB = 6V
nA
mV
fT
320
VCE = 2V, IE =
10mA, f = 100MHz
MHz
pF
Typ.
Max.
Unit
Conditions
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5587(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC5588 | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 800V 15A 3-Pin(3+Tab) TO-3P(HIS) 制造商:Distributed By MCM 功能描述:1700V 15A 75W Bce Toshiba Transistor 2-16E3A |
| 2SC5588(Q,M) | 功能描述:两极晶体管 - BJT Transistor NPN 1700V 15A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5589(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC558B | 制造商:n/a 功能描述:2SC558B TO92 S7D4A |
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