参数资料
型号: 2SC5680
元件分类: 功率晶体管
英文描述: 10 A, 800 V, NPN, Si, POWER TRANSISTOR
封装: TO-3PMLH, 3 PIN
文件页数: 1/4页
文件大小: 28K
代理商: 2SC5680
2SC5680
No.6652-1/4
Features
High speed.
High breakdown voltage(VCBO=1500V).
High reliability(Adoption of HVP process).
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
1500
V
Collector-to-Emitter Voltage
VCEO
800
V
Emitter-to-Base Voltage
VEBO
5V
Collector Current
IC
10
A
Collector Current (Pulse)
ICP
25
A
Collector Dissipation
PC
3.0
W
Tc=25
°C80
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=800V, IE=0
10
A
Collector Cutoff Current
ICES
VCE=1500V, RBE=0
1.0
mA
Collector Sustain Voltage
VCEO(sus)
IC=100mA, IB=0
800
V
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
1.0
mA
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6652A
2SC5680
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Package Dimensions
unit : mm
2174A
[2SC5680]
42501 TS IM TA-3147 / 80100 TS IM TA-2889
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
21.0
5.0
22.0
0.8
20.4
4.0
16.0
3.4
2.0
2.8
2.1
5.45
0.7
0.9
3.5
8.0
5.6
3.1
12
3
相关PDF资料
PDF描述
2SC5684 0.8 A, 800 V, NPN, Si, POWER TRANSISTOR
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2SC5694 7 A, 50 V, NPN, Si, POWER TRANSISTOR
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