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参数资料
| 型号： | 2SC5606-FB-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, 19, 1608, ULTRA SUPER MINIMOLD PACKAGE-3 |
| 文件页数： | 3/9页 |
| 文件大小： | 194K |
| 代理商： | 2SC5606-FB-A |
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DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC5606
NPN SILICON RF TRANSISTOR FOR
LOW NOISE HIGH-GAIN AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
Document No. PU10781EJ01V0DS (1st edition)
(Previous No. P14658EJ3V0DS00)
Date Published August 2009 NS
Printed in Japan
1999, 2009
FEATURES
Suitable for high-frequency oscillation
fT = 25 GHz technology adopted
3-pin ultra super minimold (19, 1608 PKG) package
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Supplying Form
2SC5606
2SC5606-A
50 pcs (Non reel)
8 mm wide embossed taping
2SC5606-T1
2SC5606-T1-A
3-pin ultra super minimold
(19, 1608 PKG) (Pb-Free)
3 kpcs/reel
Pin 3 (collector) face the perforation side of
the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
15
V
Collector to Emitter Voltage
VCEO
3.3
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
35
mA
Total Power Dissipation
Ptot
Note
115
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy substrate
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PDF描述 |
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| 2SC5606-T1-FB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5606-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5616-T3FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5606-T1-A | 功能描述:RF TRANSISTOR NPN SOT-523 制造商:cel 系列:- 包装:剪切带（CT） 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿（最大值）:3.3V 频率 - 跃迁:21GHz 噪声系数（dB，不同 f 时的典型值）:1.2dB @ 2GHz 增益:14dB 功率 - 最大值:115mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:60 @ 5mA，2V 电流 - 集电极（Ic）（最大值）:35mA 安装类型:表面贴装 封装/外壳:SOT-523 供应商器件封装:SOT-523 标准包装:1 |
| 2SC5606-T1-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5611 | 制造商:Sony Semiconductor Solutions Division 功能描述: |
| 2SC5612 | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
| 2SC5612LB228 | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTORSUBBING WITH B1BAJW000001 |
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