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参数资料
| 型号： | 2SC5606-FB-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, 19, 1608, ULTRA SUPER MINIMOLD PACKAGE-3 |
| 文件页数： | 4/9页 |
| 文件大小： | 194K |
| 代理商： | 2SC5606-FB-A |
Data Sheet PU10781EJ01V0DS
2
2SC5606
ELECTRICAL CHARACTERISTICS (TA = +25
°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
–
200
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
–
200
nA
DC Current Gain
hFE
Note 1
VCE = 2 V, IC = 5 mA
60
80
100
–
RF Characteristics
Gain Bandwidth Product
fT
VCE = 2 V, IC = 20 mA, f = 2 GHz
–
21
–
GHz
Insertion Power Gain
S21e2 VCE = 2 V, IC = 20 mA, f = 2 GHz
10
12.5
–
dB
Noise Figure
NF
VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt
–
1.2
1.5
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 2 V, IE = 0 mA, f = 1 MHz
–
0.21
0.3
pF
Maximum Available Power Gain
MAG
Note 3
VCE = 2 V, IC = 20 mA, f = 2 GHz
–
14
–
dB
Maximum Stable Power Gain
MSG
Note 4
VCE = 2 V, IC = 20 mA, f = 2 GHz
–
15
–
dB
Notes 1. Pulse measurement: PW
≤ 350
μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MAG =
4. MSG =
hFE CLASSIFICATION
Rank
FB/YFB
Marking
UA
hFE
60 to 100
(K –
√ (K2 – 1) )
S21
S12
S21
S12
<R>
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5606-T1-A | 功能描述:RF TRANSISTOR NPN SOT-523 制造商:cel 系列:- 包装:剪切带（CT） 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿（最大值）:3.3V 频率 - 跃迁:21GHz 噪声系数（dB，不同 f 时的典型值）:1.2dB @ 2GHz 增益:14dB 功率 - 最大值:115mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:60 @ 5mA，2V 电流 - 集电极（Ic）（最大值）:35mA 安装类型:表面贴装 封装/外壳:SOT-523 供应商器件封装:SOT-523 标准包装:1 |
| 2SC5606-T1-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5611 | 制造商:Sony Semiconductor Solutions Division 功能描述: |
| 2SC5612 | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
| 2SC5612LB228 | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTORSUBBING WITH B1BAJW000001 |
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