- 您现在的位置：买卖IC网 > PDF目录49962 > 2SC5614 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SC5614 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | M13, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 19K |
| 代理商： | 2SC5614 |
NE856M13
NPN SILICON TRANSISTOR
NEW MINIATURE M13 PACKAGE:
– Small transistor outline –
1.0 X 0.5 X 0.5 mm
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
LOW NOISE FIGURE:
NF = 1.4 dB at 1 GHz
HIGH COLLECTOR CURRENT:
IC MAX = 100 mA
FEATURES
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M13
PRELIMINARY DATA SHEET
PART NUMBER
NE856M13
EIAJ1 REGISTERED NUMBER
2SC5614
PACKAGE OUTLINE
M13
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
fT
Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz
GHz
3
4.5
NF
Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz
dB
1.4
2.5
|S21E|2
Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz
dB
7
10
hFE2
Forward Current Gain at VCE = 3 V, IC = 7 mA
80
145
ICBO
Collector Cutoff Current at VCB = 10 V, IE = 0
A1
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
A1
CRE3
Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz
pF
0.7
1.5
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
California Eastern Laboratories
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤ 350 s, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
DESCRIPTION
The NE856M13 transistor is designed for low cost amplifier
and oscillator applications. Low noise figure, high gain and high
current capability equate to wide dynamic range and excellent
linearity. NEC's new low profile/flat lead style "M13" package
is ideal for today's portable wireless applications. The NE856
is also available in chip, Micro-x, and eight different low cost
plastic surface mount package styles.
+0.1
–0.05
+0.1
–0.05
+0.1
–0.05
0.5
3
0.1
1
2
1.0
+0.1
–0.05
+0.1
–0.05
0.3
0.35
0.7
0.15
+0.1
–0.05
0.15
0.2
0.125
0.5
±0.05
X
Bottom View
1
2
3
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC5618 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5646A | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5646A | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5647 | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5681 | 15 A, 800 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC562 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC562200VLA | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
| 2SC562200VLK | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC563200L | 功能描述:TRANS NPN 8VCEO 50MA S-MINI 3P RoHS:否 类别:分离式半导体产品 >> RF 晶体管 (BJT) 系列:- 产品变化通告:Product Discontinuation 17/Dec/2010 标准包装:1 系列:- 晶体管类型:NPN 电压 - 集电极发射极击穿（最大）:4.7V 频率 - 转换:47GHz 噪声系数（dB典型值@频率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 时的最小直流电流增益 (hFE):160 @ 25mA，3V 电流 - 集电极 (Ic)（最大）:45mA 安装类型:表面贴装 封装/外壳:4-SMD，扁平引线 供应商设备封装:4-TSFP 包装:Digi-Reel® 其它名称:BFP 740FESD E6327DKR |
| 2SC5632G0L | 功能描述:TRANS NPN 8VCEO 50MA SMINI-3 RoHS:是 类别:分离式半导体产品 >> RF 晶体管 (BJT) 系列:- 产品变化通告:Product Discontinuation 17/Dec/2010 标准包装:1 系列:- 晶体管类型:NPN 电压 - 集电极发射极击穿（最大）:4.7V 频率 - 转换:47GHz 噪声系数（dB典型值@频率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 时的最小直流电流增益 (hFE):160 @ 25mA，3V 电流 - 集电极 (Ic)（最大）:45mA 安装类型:表面贴装 封装/外壳:4-SMD，扁平引线 供应商设备封装:4-TSFP 包装:Digi-Reel® 其它名称:BFP 740FESD E6327DKR |
发布紧急采购，3分钟左右您将得到回复。