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参数资料
| 型号： | 2SC5616 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | M13, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 19K |
| 代理商： | 2SC5616 |
NE688M13
NPN SILICON TRANSISTOR
NEW MINIATURE M13 PACKAGE:
– Small transistor outline –
1.0 X 0.5 X 0.5 mm
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
HIGH GAIN BANDWIDTH PRODUCT:
fT = 9.5 GHz
LOW NOISE FIGURE:
NF = 1.7 dB at 2 GHz
HIGH COLLECTOR CURRENT:
IC MAX = 100 mA
FEATURES
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M13
PRELIMINARY DATA SHEET
PART NUMBER
NE688M13
EIAJ1 REGISTERED NUMBER
2SC5616
PACKAGE OUTLINE
M13
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
fT
Gain Bandwidth at VCE = 1 V, IC = 3 mA, f = 2 GHz
GHz
4
5
VCE = 3 V, IC = 20 mA, f = 2 GHz
GHz
9.5
NF
Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz
dB
1.9
2.5
VCE = 3 V, IC = 7 mA, f = 2 GHz
dB
1.7
|S21E|2
Insertion Power Gain at VCE = 1 V, IC = 3 mA, f = 2 GHz
dB
3
4
VCE = 3 V, IC = 20 mA, f = 2 GHz
dB
8
hFE2
Forward Current Gain at VCE = 1 V, IC = 3 mA
80
145
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
A
0.1
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
A
0.1
CRE3
Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz
pF
0.7
0.8
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
California Eastern Laboratories
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤ 350 s, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
DESCRIPTION
The NE688M13 transistor is designed for low cost amplifier
and oscillator applications. Low noise figure, high gain and high
current capability equate to wide dynamic range and excellent
linearity. NEC's new low profile/flat lead style "M13" package
is ideal for today's portable wireless applications. The NE688
is also available in chip and six different low cost plastic surface
mount package styles.
+0.1
–0.05
+0.1
–0.05
+0.1
–0.05
0.5
3
0.1
1
2
1.0
+0.1
–0.05
+0.1
–0.05
0.3
0.35
0.7
0.15
+0.1
–0.05
0.15
0.2
0.125
0.5
±0.05
X
Bottom View
1
2
3
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| 2SC563200L | 功能描述:TRANS NPN 8VCEO 50MA S-MINI 3P RoHS:否 类别:分离式半导体产品 >> RF 晶体管 (BJT) 系列:- 产品变化通告:Product Discontinuation 17/Dec/2010 标准包装:1 系列:- 晶体管类型:NPN 电压 - 集电极发射极击穿（最大）:4.7V 频率 - 转换:47GHz 噪声系数（dB典型值@频率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 时的最小直流电流增益 (hFE):160 @ 25mA，3V 电流 - 集电极 (Ic)（最大）:45mA 安装类型:表面贴装 封装/外壳:4-SMD，扁平引线 供应商设备封装:4-TSFP 包装:Digi-Reel® 其它名称:BFP 740FESD E6327DKR |
| 2SC5632G0L | 功能描述:TRANS NPN 8VCEO 50MA SMINI-3 RoHS:是 类别:分离式半导体产品 >> RF 晶体管 (BJT) 系列:- 产品变化通告:Product Discontinuation 17/Dec/2010 标准包装:1 系列:- 晶体管类型:NPN 电压 - 集电极发射极击穿（最大）:4.7V 频率 - 转换:47GHz 噪声系数（dB典型值@频率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 时的最小直流电流增益 (hFE):160 @ 25mA，3V 电流 - 集电极 (Ic)（最大）:45mA 安装类型:表面贴装 封装/外壳:4-SMD，扁平引线 供应商设备封装:4-TSFP 包装:Digi-Reel® 其它名称:BFP 740FESD E6327DKR |
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