参数资料
型号: 2SC5616
元件分类: 小信号晶体管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: M13, 3 PIN
文件页数: 2/2页
文件大小: 19K
代理商: 2SC5616
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. With device mounted on 1.08 cm2 X 1.2 mm glass epoxy board.
SYMBOLS
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
9
VCEO
Collector to Emitter Voltage
V
6
VEBO
Emitter to Base Voltage
V
2
IC
Collector Current
mA
100
PT2
Total Power Dissipation
mW
140
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
NE688M13
Collector to Emmiter Voltage, VCE (V)
Collector
Current,
I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Collector Current, IC (mA)
DC
Current
Gain,
h
FE
D.C. CURRENT GAIN vs.
COLLECTOR CURRENT
Base to Emmiter Voltage, VBE (V)
Collector
Current,
I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
30
25
20
15
10
5
0
2.5
5
7
200
A
180
A
160
A
140
A
120
A
100
A
80
A
60
A
40
A
IB = 20
A
200
100
0
0.1 0.2
0.5
1
25
10
20
50
100
VCE = 1 V
VCE = 1 V
0
0.5
1
100
50
20
2
0.5
1
0.2
0.1
0.05
0.02
0.01
10
5
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
2/09/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
相关PDF资料
PDF描述
2SC5618 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5618-EB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5618-FB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5618-EB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5623 RF SMALL SIGNAL TRANSISTOR
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