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参数资料
| 型号： | 2SC5655-FB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 2/6页 |
| 文件大小： | 93K |
| 代理商： | 2SC5655-FB |
Data Sheet P15247EJ1V0DS
2
2SC5655
ELECTRICAL CHARACTERISTICS (TA = +25
°°°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
–
600
nA
Emitter Cut-off Current
IEBO
VBE = 1 V, IC = 0 mA
–
600
nA
DC Current Gain
hFE
Note 1
VCE = 1 V, IC = 5 mA
80
–
160
–
RF Characteristics
Gain Bandwidth Product
fT
VCE = 1 V, IC = 5 mA, f = 2 GHz
3.5
5.5
–
GHz
Insertion Power Gain
S21e2 VCE = 1 V, IC = 5 mA, f = 2 GHz
3.5
4.5
–
dB
Noise Figure
NF
VCE = 1 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt
–1.5
2.5
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 0.5 V, IE = 0 mA, f = 1 MHz
–
0.8
1.0
pF
Notes 1. Pulse measurement: PW
≤ 350
s, Duty Cycle ≤ 2%
2. Collector to base capacitance measured using capacitance meter (self-balancing bridge method) when
the emitter is connected to the guard pin
hFE CLASSIFICATION
Rank
FB
Marking
K
hFE Value
80 to 160
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