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参数资料
| 型号： | 2SC5706TP-FA |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/5页 |
| 文件大小： | 40K |
| 代理商： | 2SC5706TP-FA |
2SA2039 / 2SC5706
No.6912-1/5
Features
DC-DC converter, relay drivers, lamp drivers,
motor drivers, strobes.
Features
Adoption of FBET, MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6912
2SA2039 / 2SC5706
High Current Switching Applications
Package Dimensions
unit : mm
2045B
30101 TS IM TA-3232
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP / NPN Epitaxial Planar Silicon Transistors
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3
0.5
1
23
4
2.3
[2SA2039 / 2SC5706]
Package Dimensions
unit : mm
2044B
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
6.5
2.3
0.5
1.5
5.5
0.8
7.0
1.2
2.5
5.0
0.85
0.5
1.2
0 to 0.2
2.3
0.6
12
4
3
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PDF描述 |
|---|---|
| 2SA2039TP | 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SC5710TP | 9000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC5710TP-FA | 9000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC5712 | 3000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SC5741-FB-A | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5706-T-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR,BJT,NPN,50V V(BR)CEO,5A I(C),TO-252VAR, LEAD FREE |
| 2SC5707 | 制造商:SANYO Semiconductor Co Ltd 功能描述:BIPOL TRANSISTOR NPN 50V I-PAK 制造商:SANYO Semiconductor Co Ltd 功能描述:50V 8A 15W Bcec Sanyo Transistor Tp 3-Pin |
| 2SC5707-E | 功能描述:两极晶体管 - BJT BIP NPN 8A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5707-TL-E | 功能描述:两极晶体管 - BJT BIP NPN 8A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5712(TE12L,F) | 功能描述:两极晶体管 - BJT NPN 100V VCBO 50V VCEO 3A IC RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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