参数资料
型号: 2SC5736-FB
元件分类: 小信号晶体管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: THIN, ULTRA SUPER MINIMOLD PACKAGE-3
文件页数: 21/28页
文件大小: 125K
代理商: 2SC5736-FB
2SC5736
M8E 00. 4
The information in this document is current as of April, 2001. The information is subject to change
without notice.
For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country.
Please check with an NEC sales representative for
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Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely.
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The "Specific" quality grade applies only to semiconductor products
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The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
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and visual equipment, home electronic appliances, machine tools, personal electronic equipment
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"Special":
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
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2SC5736-T1FB-A L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
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相关代理商/技术参数
参数描述
2SC57390P 功能描述:TRANS NPN PWR AMP 60V 3A TO-220D RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)(最大):1A 电压 - 集电极发射极击穿(最大):30V Ib、Ic条件下的Vce饱和度(最大):200mV @ 100mA,1A 电流 - 集电极截止(最大):100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR
2SC5748(Q) 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 900V 16A 3-Pin TO-3P(LH)
2SC5750-A 功能描述:RF TRANSISTOR NPN SOT-343 制造商:cel 系列:- 包装:剪带 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿(最大值):6V 频率 - 跃迁:15GHz 噪声系数(dB,不同 f 时的典型值):1.7dB @ 2GHz 增益:15dB 功率 - 最大值:200mW 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):75 @ 20mA,3V 电流 - 集电极(Ic)(最大值):50mA 安装类型:表面贴装 封装/外壳:SC-82A,SOT-343 供应商器件封装:- 标准包装:1
2SC5750-T1-A 功能描述:RF TRANSISTOR NPN SOT-343 制造商:cel 系列:- 包装:带卷(TR) 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿(最大值):6V 频率 - 跃迁:15GHz 噪声系数(dB,不同 f 时的典型值):1.7dB @ 2GHz 增益:15dB 功率 - 最大值:200mW 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):75 @ 20mA,3V 电流 - 集电极(Ic)(最大值):50mA 安装类型:表面贴装 封装/外壳:SC-82A,SOT-343 供应商器件封装:SOT-343 标准包装:3,000
2SC5750-T1-A-FB 制造商:Renesas Electronics Corporation 功能描述: