参数资料
型号: 2SC5761
元件分类: 小信号晶体管
英文描述: X BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
封装: PLASTIC, M04, SUPERMINI-4
文件页数: 2/9页
文件大小: 145K
代理商: 2SC5761
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on 1.08 cm2 1.0 mm (t) glass epoxy substrate
SYMBOLS
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
8.0
VCEO
Collector to Emitter Voltage
V
2.3
VEBO
Emitter to Base Voltage
V
1.2
IC
Collector Current
mA
35
PT2
Total Power Dissipation
mW
80
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
NESG2030M04
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Collector Current, lC (mA)
DC
Current
Gain,
hFE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Collector to Emitter Voltage, VCE (V)
Collector
Current,
Ic
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Frequency, f (GHz)
Insertion
Power
Gain,
|S
21e
|2
(dB)
INSERTION POWER GAIN
vs. FREQUENCY
VCE = 2 V
IC = 20 mA
30
25
20
15
10
5
0
0.1110
Collector Current, IC (mA)
Gain
Bandwdth,
f
T
(GHz)
GAIN BANDWIDTH vs.
COLLECTOR CURRENT
40
35
30
25
20
15
10
5
0
010
100
VCE = 2 V
f = 2 GHz
SYMBOLS
PARAMETERS
UNITS
RATINGS
Rth j-c
Junction to Case Resistance
°C/W
150
THERMAL RESISTANCE
40
35
30
25
20
15
10
5
0
01
2
3
100 a
130 a
40 a
IB = 10 a
160 a
70 a
190 a
1000
100
10
100
10
1
0.1
VCE = 2 V
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