参数资料
型号: 2SC5761
元件分类: 小信号晶体管
英文描述: X BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
封装: PLASTIC, M04, SUPERMINI-4
文件页数: 3/9页
文件大小: 145K
代理商: 2SC5761
NESG2030M04
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Collector Current, IC (mA)
Maximum
Stable
Gain,
MSG
(dB)
Insertion
Power
Gain,
IS
21e
I2
MAXIMUM STABLE GAIN,
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
VCE = 2 V
f = 1 GHz
30
25
20
15
10
5
0
1
10
100
MSG
|S21e|
2
Collector Current, IC (mA)
Maximum
Stable
Gain,
MSG
(dB)
Insertion
Power
Gain,
IS
21e
I2
MAXIMUM STABLE GAIN,
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
VCE = 2 V
f = 2 GHz
30
25
20
15
10
5
0
1
10
100
MSG
|S21e|
2
Input Power, Pin (V)
Output
Power,
P
out
(dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
Pout
IC
VCE = 2 V, f = GHz
Icq = 5 mA(RF OFF)
25
20
15
10
5
0
-5
-10
-15
-20
-15
-10
-5
0
5
80
70
60
50
40
30
20
10
0
Collector Current, IC (mA)
Noise
Figure,
NF
(dB)
NOISE FIGURE AND ASSOCIATED
GAIN vs. COLLECTOR CURRENT
5
4
3
2
1
0
110
100
0
5
10
15
20
25
VCE = 2 V
f = 1.5 GHz
Ga
NF
Associated
Gain,
G
A
(dB)
VCE = 2 V
f = 5 GHz
30
25
20
15
10
5
0
1
10
100
MAG
|S21e|
2
MAXIMUM AVAILABLE GAIN,
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
Insertion
Power
Gain,
IS
21e
I2
Maximum
Available
Gain,
MAG
(dB)
VCE = 2 V
Icq = 5 mA
f = 2 GHz
offset = 1 MHz
70
60
50
40
30
20
10
0
-5
0
5
10
15
20
Collector Current, IC (mA)
Collector
Current,
I
C
(mA)
Output Power (each tone), Pout (mA)
Third
Order
Intermodulation
Distortion,
IM3
(dBc)
THIRD ORDER INTERMODULATION
DISTORTION
vs. OUTPUT POWER
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