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参数资料
| 型号： | 2SC5765 |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | TO-92SP, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 182K |
| 代理商： | 2SC5765 |
UTC2SC5765
NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
2
QW-R216-002,B
ELECTRICAL CHARACTERISTICS CURVES
0.01
0.1
1
Collector Emitter Voltage VCE(V)
10
100
0.01
0.1
1
100
10
Ic max
(Continous)
Safe Operating Area
0.01
0.001
0.01
0.1
1
10
1
Common Emitter
Ic/IB=50
0.1
Ta= -25℃
Ta= 25℃
Ta=100℃
0.5
Ic-VCE
0
4
5
Collector Emitter Voltage VCE(V)
1.0
1
1.5
Collector
Current
Ic
(A)
0
2.0
2
3
IB=0mA
1
2
4
6
8
10
20
30
60
Common Emitter
Ta= 25℃
VCE(sat)-Ic
C
ol
le
ct
or
E
m
itt
er
S
at
ur
at
io
n
V
ol
ta
ge
V
C
E
(s
at
)(
V
)
Collector Current Ic (A)
0.01
10
100
1000
1
10
10000
Common Emitter
VCE=1.5V
0.1
Ta= -25℃
Ta= 25℃
Ta=100℃
hFE-Ic
D
C
ur
re
nt
G
ai
n
hF
E
Collector Current Ic (A)
0
0.2
3.0
0.4
2.0
0
4.0
5.0
Base Emitter Voltage VBE(V)
0.6
1.0
0.8
1.2
1.0
1.4
Collector
Current
Ic
(A)
Common Emitter
VCE=1.5V
Ic-VBE
Ta= -25℃
Ta= 25℃
Ta=100℃
Collector
Current
Ic
(A)
*Single nonrepetitive
pulse
Ta= 25℃
Curves must be derated linearly
with increase in temperature
when a device is mounted
on a Glass epoxy board
(35mm*30mm*1mm)
Ic max(Pulsed)
1ms*
t=100ms*
DC Operation
VCEO max
400
Pc-Ta
0
600
Ambient Temperature Ta
50
100
Collector
Power
Dissipation
Pc
(mW
)
(℃)
150
200
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