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参数资料
| 型号： | 2SC5787 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | M13, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 57K |
| 代理商： | 2SC5787 |
NE894M13
NPN SILICON TRANSISTOR
NEW MINIATURE M13 PACKAGE:
– Small transistor outline
– 1.0 X 0.5 X 0.5 mm
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
IDEAL FOR > 3 GHz OSCILLATORS
LOW NOISE, HIGH GAIN
LOW Cre
UHSO 25 GHz PROCESS
FEATURES
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M13
PART NUMBER
NE894M13
EIAJ1 REGISTERED NUMBER
2SC5787
PACKAGE OUTLINE
M13
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
fT
Gain Bandwidth at VCE = 1 V, IC = 20 mA, f = 2 GHz
GHz
17
20
–
|S21E|2
Insertion Power Gain at VCE = 1 V, IC = 20 mA, f = 2 GHz
dB
11
13
–
|NF
Noise Figure at VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = ZOPT
dB
–
1.4
2.5
Cre
Reverse Transfer Capacitance3 at VCB = 0.5 V, IE = 0 mA, f = 1 MHz
pF
–
0.22
0.30
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
nA
–
100
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
–
100
hFE
DC Current Gain2 at VCE = 1 V, IC = 5 mA
50
–
100
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤ 350 s, duty cycle ≤ 2 %.
3. Collector to base capacitance when the emitter is grounded
DESCRIPTION
The NE894M13 transistor is designed for oscillator applica-
tions above 3 GHz. The NE894M13 features low voltage, low
current operation, low noise, and high gain. NEC's new low
profile/flat lead style "M13" package is ideal for today's portable
wireless applications.
+0.1
–0.05
+0.1
–0.05
+0.1
–0.05
0.5
3
0.1
1
2
1.0
+0.1
–0.05
+0.1
–0.05
0.3
0.35
0.7
0.15
+0.1
–0.05
0.15
0.2
0.125
0.5±0.05
E
7
Bottom View
1
2
3
California Eastern Laboratories
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| 2SC57880QA | 功能描述:TRANS NPN PWR AMP 60VCEO 3A MT-4 RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SC5793-YD | 制造商:ON Semiconductor 功能描述: |
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